Active and preferred
RoHS Compliant

ISC300N20NM6

OptiMOS™ 6 power MOSFET 200 V normal level in SuperSO8 package
Data Sheet
package
ea.
in stock

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ISC300N20NM6
ISC300N20NM6
ea.
Data Sheet

Product details

  • ID (@25°C) max
    44 A
  • IDpuls max
    176 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    SuperSO8 5x6
  • Polarity
    N
  • QG (typ @10V)
    17 nC
  • RDS (on) (@10V) max
    30 mΩ
  • VDS max
    200 V
  • VGS(th) range
    3 V to 4.5 V
  • VGS(th)
    3.7 V
Recommended
OPN
ISC300N20NM6ATMA1
Product Status active and preferred
Infineon Package
PG-TDSON-8
Package Name SuperSO8 5x6
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TDSON-8
Package Name SuperSO8 5x6
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
ISC300N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. The OptiMOS™ 6 200 V technology was designed to fullfill the requirements of a wide range of applications: from static swiching to high frequency in hard and soft switching applications.

Features

  • Industries lowest RDS(on) in 200 V
  • Industries lowest Qrr in 200 V
  • Compared to previous 200 V technology
  • Up to 42 % lower RDS(on)
  • Up to 89% lower Qrr(typ)
  • 36% lower FOMg
  • More than 3 times softer diode
  • Improved capacitance linearity
  • Improved SOA
  • Tight Vgs(th) spread of +/-750 mV
  • High avalanche ruggedness
  • Max Tj of 175°C and MSL1

Benefits

  • Low conduction and switching losses
  • Stable operation with improved EMI
  • Better current sharing when paralleling
  • Enhanced robustness
  • Improved system reliability

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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