IRF9520N

-100V Single P-Channel Power MOSFET in a TO-220 package
Data Sheet

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IRF9520N
IRF9520N
Data Sheet

Product details

  • ID (@25°C) max
    -6.8 A
  • Mounting
    THT
  • Package
    TO-220
  • Polarity
    P
  • Ptot max
    48 W
  • Qgd
    10 nC
  • QG (typ @10V)
    18 nC
  • RDS (on) (@10V) max
    480 mΩ
  • RthJC max
    3.1 K/W
  • Tj max
    175 °C
  • VDS max
    -100 V
  • VGS(th) range
    -2 V to -4 V
  • VGS(th)
    -3 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard through-hole power package
  • High-current rating

Benefits

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification
  • High performance in low frequency applications
  • Standard pin-out allows for drop-in replacement
  • High current capability

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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