BSC750N10ND G

Data Sheet

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BSC750N10ND G
BSC750N10ND G
Data Sheet

Product details

  • Ciss
    540 pF
  • Coss
    76 pF
  • ID max
    13 A
  • IDpuls max
    52 A
  • Operating Temperature range
    -55 °C to 150 °C
  • Package
    SuperSO8 dual
  • Polarity
    N+N
  • Ptot max
    26 W
  • QG (typ @10V)
    8 nC
  • RDS (on) (@10V) max
    75 mΩ
  • RthJC max
    4.9 K/W
  • Rth
    4.9 K/W
  • VDS max
    100 V
  • VGS(th) (typ) range
    2 V to 4 V
  • VGS(th) (typ)
    3 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).

Features

  • Excellent switching performance
  • World’s lowest RDS(on)
  • Very low Qg and Qgd
  • Excellent gate charge x RDS(on) product (FOM)
  • RoHS compliant-halogen free
  • MSL1 rated 2

Benefits

  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }