NEW
Active and preferred
RoHS Compliant

IQE020N04LM6CGSC

NEW
OptiMOS™ 6 low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down dual-side cooled package with best-price performance

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IQE020N04LM6CGSC
IQE020N04LM6CGSC

Product details

  • ID (@25°C) max
    166 A
  • IDpuls max
    664 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    PQFN 3.3x3.3 Source-Down
  • Polarity
    N
  • Ptot max
    107 W
  • QG (typ @10V)
    25 nC
  • QG (typ @4.5V)
    12.1 nC
  • RDS (on) (@10V) max
    2.05 mΩ
  • RDS (on) (@4.5V) max
    2.9 mΩ
  • RthJC max
    1.4 K/W
  • Special Features
    Logic Level, Dual-Side Cooling
  • VDS max
    40 V
  • VGS(th) range
    1.3 V to 2.3 V
  • VGS(th)
    1.6 V
OPN
IQE020N04LM6CGSCATMA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 6000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name -
Packing Size 6000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
IQE020N04LM6CG, OptiMOS™ 6 40 V power MOSFET, 2.0 mOhm, in a innovative PQFN 3.3x3.3 Source-Down Dual-Side cooled package with Center-Gate footprint enables easy design-in on space-constrained PCB areas. A best-price approach disrupts the status quo by delivering exceptional power density and a minimized form factor in end applications, enabling a compact design and optimizing the end user experience while offering best price-performance.

Features

  • Extended gate voltage rating
  • 175°C temperature rating
  • Best price performance
  • Package with dual-side cooling variant

Benefits

  • Gate voltage overdrive
  • Fast charge & discharge of Cg
  • Increased reliability
  • High power density
  • Competitive price
  • Superior thermal capabilities

Documents

Design resources

Developer community

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