2ED1323S12P
not for new design
RoHS Compliant
Lead-free

2ED1323S12P

1200 V high-side/low-side gate driver IC with AMC (Active Miller Clamp), SCC (Short Circuit Clamp)
Datasheet
package
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2ED1323S12P
2ED1323S12P
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Datasheet


Product details

  • Channels
    2
  • Configuration
    High-side and low-side
  • Input Vcc min
    13 V
  • Isolation Type
    Functional levelshift SOI (Silicon On Insulator)
  • Output Current (Sink)
    2.3 A
  • Output Current (Source)
    2.3 A
  • Product Name
    2ED1323S12P
  • Qualification
    Industrial
  • Turn Off Propagation Delay
    350 ns
  • Turn On Propagation Delay
    350 ns
  • VBS UVLO (Off)
    11.3 V
  • VBS UVLO (On)
    12.2 V
  • VCC UVLO (Off)
    11.3 V
  • VCC UVLO (On)
    12.2 V
  • Voltage Class
    1200 V

OPN
2ED1323S12PXUMA1
Product Status not for new design
Infineon Package
PG-DSO-20
Package Name N/A
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
ID
Country of Diffusion (CoD)
MY
View product family

Product Status not for new design
Infineon Package
PG-DSO-20
Package Name -
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
ID
Country of Diffusion (CoD)
MY
View product family
EiceDRIVER™ 1200 V high-side/low-side gate driver IC with 2.3 A source, 2.3 A sink current in the sufficient creepage, clearance distance DSO-20 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1323S12P supports Active Miller Clamp (AMC) and Short Circuit Clamp (SCC) for the best in class switching performance in the sufficient creepage/clearance distance package DSO-20. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. Since the device contains no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range.

Features

  • Unique thin-film (SOI)-technology
  • Floating channel for bootstrap op.
  • Max. boots. volt. (VB node) +1225 V
  • Operating voltages < + 1200 V
  • Negative VS transient vol. immunity
  • 2.3 A/2.3 A peak output source/sink
  • Integrated over-current protection
  • ± 5% high accu. reference threshold
  • Less than 1 us over-current sens
  • Integrated Active Miller Clamp
  • Integr. short circuit clamp functi.
  • Integr. ultra-fast bootstrap diode

Benefits

  • Reduced BOM cost
  • Smaller PCB space
  • Lower cost with simpler design
  • Design flexibility
  • Increased reliability/robustness
  • 50% lower level shift losses leads
  • Very stable switching performance
  • Latch-up immune increased reliability
  • Space and cost savings compare
  • Protection at low supply voltage
  • Wider creepage and clearance distance

Diagrams

diagram_2ED1323S12P_2ED1324S12P
diagram_2ED1323S12P_2ED1324S12P
diagram_2ED1323S12P_2ED1324S12P diagram_2ED1323S12P_2ED1324S12P diagram_2ED1323S12P_2ED1324S12P
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