600V CoolSiC™ Schottky Diode Generation 2 & 3

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Header_600V_SiC Diode_WEB

 

600V CoolSiC™ generation 2

The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The low V F values characterizing this family of products, make it particularly suitable for applications requiring high load efficiency. With the Generation 2 Infineon introduced a new design concept consisting in regularly distributed p-doped areas, in conjunction with the pure Schottky ones: the so-called "merged pn-structure" (MPS).

 

600V CoolSiC™ generation 3

The third generation of Infineon SiC Schottky diodes features the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The Generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.


Product portfolio - 600V CoolSiC™ Schottky diodes generation 3

Click on a product type to learn more, download datasheet and order

  TO-252 DPAK TO-220 real 2pin
3A IDD03SG60C IDH03SG60C
4A IDD04SG60C IDH04SG60C
5A IDD05SG60C IDH05SG60C
6A IDD06SG60C IDH06SG60C
8A IDD08SG60C IDH08SG60C
9A IDD09SG60C IDH09SG60C
10A IDD10SG60C IDH10SG60C
12A IDD12SG60C IDH12SG60C

 

Product portfolio - 600V CoolSiC™ Schottky diodes generation 2

Click on a product type to learn more, download datasheet and order

  TO-263 D²PAK TO-220 real 2pin
4A   IDH04S60C*
5A   IDH05S60C*
6A IDB06S60C* IDH06S60C*
8A   IDH08S60C*
10A IDB10S60C* IDH10S60C*
12A   IDH12S60C*
16A   IDH16S60C*

 *not for new design



Benefits Features Applications
  • System efficiency improvement compared to Si diodes
  • Enabling higher frequency/increased power density
  • Reduced EMI
  • Highly stable switching performance
  • Reduced cooling requirements thus system cost/increased system reliability

 

  • Benchmark switching behavior
  • No reverse recovery charge
  • Smooth recovery curve
  • Temperature independent switching behavior
  • High operating temperature (T jmax = 175°C)

 

 

 

 

Reliability-data-button


Product Selection Guide

Title Size Date Version
22.2 MB 21 Feb 2017 00_00

Product Catalogue

Title Size Date Version
4.8 MB 21 Jun 2016 02_00

Product Brochure

Title Size Date Version
2.1 MB 09 May 2016 01_00

Product Brief

Title Size Date Version
202 KB 01 Dec 2012 01_00
347 KB 04 Mar 2009 01_00

Product Overview

Title Size Date Version
2 MB 14 Mar 2014 01_00

Application Notes

Title Size Date Version
2.2 MB 19 Dec 2014 02_00
791 KB 16 Jun 2014 01_00

Article

Title Size Date Version
1.6 MB 01 Sep 2012 01_00

Additional Product Information

Title Size Date Version
253 KB 11 Sep 2015 01_00

Evaluation Boards

Board Family Description Status
EVALPFC3-ICE3PCS02G Diode (Si, SiC), MOSFET, Power Controller (PWM, PFC) PFC CCM ICE3PCS02G for 300 W 400 V SMPS evaluation board with 85~265V AC universal input.
  • ICE3PCS02G
  • IDH04S60C
  • IPP60R199CP
active and preferred
EVALPFC3-ICE3PCS03G Diode (Si, SiC), MOSFET, Power Controller (PWM, PFC) PFC CCM ICE3PCS03G for 300 W 400 V SMPS evaluation board with 85~265V AC universal input.
  • ICE3PCS02G
  • IDH04S60C
  • IPP60R199CP
active and preferred

PCB Design Data

Title Size Date Version
752 KB 05 Nov 2013 02_00
470 KB 05 Nov 2013 02_00
98 KB 05 Nov 2013 02_00
624 KB 05 Nov 2013 02_00

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