Active and preferred
RoHS Compliant

SPB80P06P G

P-channel enhancement mode Field-Effect Transistor (FET), -60V, D2PAK
Data Sheet
package

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SPB80P06P G
SPB80P06P G
Data Sheet

Product details

  • Budgetary Price €/1k
    1.64
  • Ciss
    4026 pF
  • Coss
    1252 pF
  • ID (@25°C) max
    -80 A
  • IDpuls max
    -320 A
  • Operating Temperature max
    175 °C
  • Operating Temperature min
    -55 °C
  • Package
    D2PAK (TO-263)
  • Polarity
    P
  • Ptot max
    375 W
  • QG (typ @10V)
    115 nC
  • RDS (on) (@10V) max
    23 mΩ
  • Rth
    0.4 K/W
  • VDS max
    -60 V
  • VGS(th)
    -3 V
Recommended
OPN
SPB80P06PGATMA1
Product Status active and preferred
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Features

  • Enhancement mode
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating
RoHS compliant, Halogen-free
  • Qualified according to AEC Q101

    • Documents

    Documents

    Design resources

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    Developer community

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