Active and preferred
RoHS Compliant
Lead-free

S79FS01GSFABHB210

ea.
in stock

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S79FS01GSFABHB210
S79FS01GSFABHB210
ea.

Product details

  • Classification
    ISO 26262-ready
  • Density
    1 GBit
  • Family
    FS-S
  • Interface Bandwidth
    204 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    133 / 102
  • Interfaces
    Dual-Quad SPI
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 105 °C
  • Operating Voltage range
    1.7 V to 2 V
  • Operating Voltage
    1.8 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    See roadmap
  • Qualification
    Automotive
OPN
S79FS01GSFABHB210
Product Status active and preferred
Infineon Package
Package Name FBGA-24 (002-15078)
Packing Size 1690
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name FBGA-24 (002-15078)
Packing Size 1690
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The S79FS01GSFABHB210 is a 1 Gbit (128 MB), 1.8 V Dual-Quad SPI Flash memory device using 65-nm MIRRORBIT™ technology. It integrates two Quad SPI dies for byte-wide (8-bit) serial transfers, supporting single, dual, and quad I/O including DDR up to 102 MHz. With 100,000 program-erase cycles, 20-year data retention, advanced sector protection, and AEC-Q100 Grade 2 qualification, it is ideal for automotive and industrial applications requiring high reliability.

Features

  • 1 Gbit (128 MB) density
  • Dual-Quad SPI interface with multi-I/O
  • Supports SPI clock modes 0 and 3
  • DDR option for high-speed access
  • Extended 24/32-bit addressing
  • Burst Wrap, Continuous (XIP), QPI read modes
  • Internal ECC with single bit error correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles minimum
  • 20 year data retention minimum
  • 2048-byte OTP array for security
  • Advanced sector protection with password

Benefits

  • High density enables large code/data storage
  • Multi-I/O SPI boosts data transfer rates
  • DDR and Quad I/O enable fast system boot
  • Flexible addressing supports large
  • Multiple read modes optimize system speed
  • ECC improves data reliability and integrity
  • Flexible erase options ease memory management
  • High endurance extends product lifetime
  • Long retention ensures data safety
  • OTP supports device authentication
  • Advanced protection enhances security
  • Wide voltage and temp range for robust use

Applications

Documents

Design resources

Developer community

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