S29GL256P11TFI010

S29GL256P11TFI010

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S29GL256P11TFI010
S29GL256P11TFI010
Datasheet


Product details


OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
The S29GL256P11TFI010 is a 256 Mbit, 3.0 V page-mode Flash memory device based on 90 nm MirrorBit® technology, with 100 ns access time and industrial temperature range (-40°C to +85°C). It features 256 uniform 128 Kbyte sectors, VersatileIO™ control (VIO: 1.65 V to VCC), advanced sector protection, and a 32-word write buffer. With 20-year data retention and 100,000 erase cycles per sector, it is ideal for embedded systems requiring reliable, high-density non-volatile storage.

Features

  • 90 nm MirrorBit process technology
  • Single 3 V read/program/erase operation
  • VersatileIO control (1.65 V to VCC I/O)
  • 32-word/64-byte write buffer
  • 8-word/16-byte page read buffer
  • Uniform 64 Kword/128 Kbyte sectors
  • 128-word/256-byte Secured Silicon Sector
  • Advanced sector protection methods
  • Program/Erase Suspend and Resume
  • Hardware data protection (WP#/ACC, VCC)
  • Write pulse glitch protection
  • 100,000 erase cycles per sector (typical)

Benefits

  • High density for embedded storage needs
  • Low voltage reduces power consumption
  • Flexible I/O for easy system integration
  • Fast programming with write buffer
  • Page read buffer speeds up data access
  • Simplifies memory management
  • Secure area for permanent IDs
  • Protects data from accidental changes
  • Suspend/resume boosts system efficiency
  • Hardware protection prevents data loss
  • Glitch protection ensures data integrity
  • High endurance for long device life

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