S29GL256P10FFI020

S29GL256P10FFI020

Datasheet
software

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

S29GL256P10FFI020
S29GL256P10FFI020
Datasheet


Product details


OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
The S29GL256P10FFI020 is a 256 Mbit, 3.0 V page-mode Flash memory device built on 90 nm MirrorBit® technology, offering uniform 128 Kbyte sectors and VersatileIO™ for I/O voltages from 1.65 V to VCC. It delivers random access as fast as 100 ns, 32-word write buffer for rapid programming, and advanced sector protection.

Features

  • 90 nm MirrorBit process technology
  • Single 3 V read/program/erase operation
  • VersatileIO control (1.65 V to VCC I/O)
  • 32-word/64-byte write buffer
  • 8-word/16-byte page read buffer
  • Uniform 64 Kword/128 Kbyte sectors
  • 128-word/256-byte Secured Silicon Sector
  • Advanced sector protection methods
  • Program/Erase Suspend and Resume
  • Hardware data protection (WP#/ACC, VCC)
  • Write pulse glitch protection
  • 100,000 erase cycles per sector (typical)

Benefits

  • High density for embedded storage needs
  • Low voltage reduces power consumption
  • Flexible I/O for easy system integration
  • Fast programming with write buffer
  • Page read buffer speeds up data access
  • Simplifies memory management
  • Secure area for permanent IDs
  • Protects data from accidental changes
  • Suspend/resume boosts system efficiency
  • Hardware protection prevents data loss
  • Glitch protection ensures data integrity
  • High endurance for long device life

Applications

Documents

Design resources

Partner solutions

Developer community