S29GL128P10TFI013

Data Sheet
software

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S29GL128P10TFI013
S29GL128P10TFI013
Data Sheet

Product details

  • Density
    128 MBit
  • Family
    GL-P
  • Initial Access Time
    100 ns
  • Interface Frequency (SDR/DDR) (MHz)
    NA
  • Interfaces
    Parallel
  • Lead Ball Finish
    Matte Tin Plating
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.7 V to 3.6 V
  • Operating Voltage
    3 V
  • Page Access Time
    25 ns
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The S29GL128P10TFI013 is a 128 Mbit page-mode Flash memory built on 90 nm MirrorBit® technology, supporting single 3 V read, program, and erase operations with supply voltage from 2.7 V to 3.6 V and VersatileIO™ (VIO) from 1.65 V to VCC. It offers 25 ns page access, 100 ns random access, uniform 128 Kbyte sector architecture, and a 32-word write buffer for efficient programming.

Features

  • 90 nm MirrorBit process technology
  • Single 3 V read/program/erase operation
  • VersatileIO control (1.65 V to VCC I/O)
  • 32-word/64-byte write buffer
  • 8-word/16-byte page read buffer
  • Uniform 64 Kword/128 Kbyte sectors
  • 128-word/256-byte Secured Silicon Sector
  • Advanced sector protection methods
  • Program/Erase Suspend and Resume
  • Hardware data protection (WP#/ACC, VCC)
  • Write pulse glitch protection
  • 100,000 erase cycles per sector (typical)

Benefits

  • High density for embedded storage needs
  • Low voltage reduces power consumption
  • Flexible I/O for easy system integration
  • Fast programming with write buffer
  • Page read buffer speeds up data access
  • Simplifies memory management
  • Secure area for permanent IDs
  • Protects data from accidental changes
  • Suspend/resume boosts system efficiency
  • Hardware protection prevents data loss
  • Glitch protection ensures data integrity
  • High endurance for long device life

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