S29GL128P10FFI010

S29GL128P10FFI010

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S29GL128P10FFI010
S29GL128P10FFI010
Datasheet


Product details


OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
The S29GL128P10FFI010 is a 128 Mbit, 3 V page-mode Flash memory device built on 90 nm MirrorBit technology, with uniform 128 Kbyte sectors and VersatileIO for flexible I/O voltage (1.65 V to VCC). It supports single word or 32-word buffer programming, 100 ns random access, and 25 ns page access. Advanced sector protection, 20-year typical data retention, and 100,000 erase cycles per sector enable reliable embedded and industrial code storage across -40°C to +85°C.

Features

  • 90 nm MirrorBit process technology
  • Single 3 V read/program/erase operation
  • VersatileIO control (1.65 V to VCC I/O)
  • 32-word/64-byte write buffer
  • 8-word/16-byte page read buffer
  • Uniform 64 Kword/128 Kbyte sectors
  • 128-word/256-byte Secured Silicon Sector
  • Advanced sector protection methods
  • Program/Erase Suspend and Resume
  • Hardware data protection (WP#/ACC, VCC)
  • Write pulse glitch protection
  • 100,000 erase cycles per sector (typical)

Benefits

  • High density for embedded storage needs
  • Low voltage reduces power consumption
  • Flexible I/O for easy system integration
  • Fast programming with write buffer
  • Page read buffer speeds up data access
  • Simplifies memory management
  • Secure area for permanent IDs
  • Protects data from accidental changes
  • Suspend/resume boosts system efficiency
  • Hardware protection prevents data loss
  • Glitch protection ensures data integrity
  • High endurance for long device life

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