Active and preferred
RoHS Compliant

IQFH68N06NM5

OptiMOS™ 5 60 V power MOSFETs in compact, high performance PQFN 8x6 package with ultra-low RDS(on)
Data Sheet
package
ea.
in stock

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IQFH68N06NM5
IQFH68N06NM5
ea.
Data Sheet

Product details

  • ID (@25°C) max
    460 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    PQFN 8x6
  • Polarity
    N
  • QG (typ @10V)
    168 nC
  • RDS (on) (@10V) max
    0.68 mΩ
  • VDS max
    60 V
  • VGS(th) range
    2.1 V to 3.3 V
  • VGS(th)
    2.8 V
Recommended
OPN
IQFH68N06NM5ATMA1
Product Status active and preferred
Infineon Package
PG-TSON-12
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSON-12
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
This 60 V normal-level power MOSFET comes in our latest innovative, compact clip-based PQFN 8x6 mm² package enabling very high current and power levels. The part offers ultra-low RDS(on) of 0.68 mΩ combined with outstanding thermal performance. This enables higher system efficiency and power density for a large variety of end applications like battery-powered applications, battery management, low-voltage drives and SMPS.

Features

  • Cutting edge OptiMOS™ silicon technology
  • High chip/package ratio
  • Ultra high currents in compact footprint
  • Ultra-low package parasitics
  • Optimized lead-frame and Cu-Clip design
  • Footprint compatibility with PQFN 5x6
  • Compact layout with less paralleling

Benefits

  • Minimized conduction losses
  • High power capability
  • Superior device performance
  • Reduced voltage overshoot
  • Superior thermal performance
  • Re-use board for multiple power levels
  • Superior switching performance/EMI

Documents

Documents

Design resources

Partner solutions

Developer community

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