IPP65R190C7

Data Sheet

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IPP65R190C7
IPP65R190C7
Data Sheet

Product details

  • Budgetary Price €/1k
    0.98
  • ID max
    13 A
  • ID (@25°C) max
    13 A
  • IDpuls max
    49 A
  • Mounting
    THT
  • Operating Temperature range
    -55 °C to 150 °C
  • Package
    TO220
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    72 W
  • QG (typ @10V)
    23 nC
  • QG
    23 nC
  • RDS (on) max
    190 mΩ
  • RDS (on) (@10V) max
    190 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    1.73 K/W
  • Rth
    1.73 K/W
  • Special Features
    highest performance
  • VDS max
    650 V
  • VGS(th) range
    3 V to 4 V
  • VGS(th)
    3.5 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Features

  • 650V voltage
  • Best-in-class R DS(on)/package
  • Low energy in output capacitance (E oss)
  • Lower gate charge Qg
  • The best track record in SJ technology

Benefits

  • Enhanced safety margin for SMPS & solar
  • Lowest conduction losses/package
  • Low switching losses
  • Better light load efficiency
  • Increased system power density
  • Outstanding quality and reliability

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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