IMT65R057M1H
not for new design
RoHS Compliant
Lead-free

IMT65R057M1H

CoolSiC™ MOSFET discrete 650 V in TOLL package

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Product details


OPN
IMT65R057M1HXUMA1
Product Status not for new design
Infineon Package
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes

Product Status not for new design
Infineon Package
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
CoolSIC™ MOSFET 650 V, 57 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 57  mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for various systems. The reduction of thermal impedance compared to D²PAK, together with the innovative .XT interconnect, make the 57 mΩ product suitable for high to mid power systems, with high efficiency targets. It ideally fits the emerging Totem Pole PFC topology in high to mid power systems. It also enables high efficiency and density in DC-DC and AC-DC stages of high to mid power systems. It is also successfully used in interleaved topologies to address high efficiency targets in high power systems.

Features

  • 1st generation CoolSiC™
  • low gate charge
  • low stored energy in COSS
  • negligable Qrr
  • flat COSS
  • flat RDS(on) over temperature

Benefits

  • higher efficiency in hard switching
  • higher efficiency in soft switching
  • hard commutation on body diode
  • high reliability
  • Kelvin source
  • Kelvin source

Applications

Documents

Design resources

Developer community