IMSQ120R181M2HH
NEW
Active and preferred
RoHS Compliant
Lead-free

IMSQ120R181M2HH

NEW
CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package
Datasheet
package

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IMSQ120R181M2HH
IMSQ120R181M2HH
Datasheet


Product details

  • Ciss
    350 pF
  • Coss
    12 pF
  • Mounting
    SMD
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    PG-HDSOP-16-U03
  • Pin Count
    16 Pins
  • Ptot (@ TA=25°C) max
    102 W
  • Qgd
    2.6 nC
  • QG
    11 nC
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    181 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    1.47 K/W
  • Technology
    CoolSiC™ G2
  • Tj max
    200 °C
  • VDS max
    1200 V

Recommended
OPN
IMSQ120R181M2HHXUMA1
Product Status active and preferred
Infineon Package
PG-HDSOP-16
Package Name N/A
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
MY
Country of Diffusion (CoD)
MY

Product Status
Active
Infineon Package
PG-HDSOP-16
Package Name -
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
MY
Country of Diffusion (CoD)
MY
CoolSiC™ MOSFET discrete 1200 V, 181 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package, optimized for industrial applications such as EV charging, string inverters, and power supplies. The Q-DPAK enables lower system cost through simplified assembly and excellent thermal performance. Top-side cooled dual half-bridge design delivers improved cooling, higher energy efficiency, greater design flexibility, and enhanced overall performance.

Features

  • VDSS = 1200 V at Tvj = 25°C
  • IDDC = 11 A at TC = 100°C
  • RDS = 181 mΩ, VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Overload operation up to Tvj = 200°C
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage 4.2 V
  • Robust against parasitic turn on
  • Robust body diode for hard commutation
  • .XT interconnection technology

Benefits

  • Higher power density
  • Enabling automated assembly
  • Less complex designs needed
  • Outstanding thermal performance vs BSC
  • Improve system power losses
  • Enable a VRMS of 950 V with PD 2
  • Lower BOM cost
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