IGZ75N65H5

Data Sheet

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IGZ75N65H5
IGZ75N65H5
Data Sheet

Product details

  • Eoff (Hard Switching)
    0.43 mJ
  • Eon
    0.68 mJ
  • IC (@ 100°) max
    75 A
  • IC (@ 25°) max
    119 A
  • ICpuls max
    300 A
  • Package
    TO-247-4
  • Ptot max
    395 W
  • QGate
    166 nC
  • RGint
    0 Ω
  • RG
    10 Ω
  • Switching Frequency
    TRENCHSTOP™5 30-100 kHz
  • Switching Frequency range
    30 kHz to 100 kHz
  • td(off)
    347 ns
  • td(on)
    26 ns
  • Technology
    IGBT TRENCHSTOP™ 5
  • tf
    15 ns
  • tr
    11 ns
  • VCE(sat)
    1.65 V
  • VCE max
    650 V
  • VGE(th) range
    3.2 V to 4.8 V
  • VGE(th)
    4 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.

Features

  • Extremely low cont. inductance loop
  • Emitter pin for driver feedback
  • Same coll. emitter creep. dist.*
  • 20% reduced total switching losses*
  • *compared to TO-247 package

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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