IGD015S10S1
coming soon
coming soon
RoHS Compliant

IGD015S10S1

CoolGaN™ Transistor 100 V G3 in RQFN 5x6, 1.2 mΩ

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IGD015S10S1
IGD015S10S1


Product details

  • Family
    CoolGaN™ Transistor 100 V G3
  • ID (@25°C) max
    164 A
  • IDpuls (@25°C) max
    880 A
  • Package
    RQFN 5x6
  • Planned to be available until at least
    2035
  • QG
    22 nC
  • Qualification
    Industrial
  • RDS (on) (typ)
    1.2 mΩ
  • VDS max
    100 V

OPN
Product Status coming soon
Infineon Package
Package Name N/A
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
MY
Country of Diffusion (CoD)
AT

Product Status coming soon
Infineon Package
Package Name -
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
MY
Country of Diffusion (CoD)
AT
The IGD015S10S1 is a 100 V normally-off e-mode power transistor housed in a Si-footprint-compatible RQFN 5x6 package, enabling high-power-density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

Features

  • 100 V e-mode power transistor
  • Dual-side cooled package
  • Ultrafast switching frequency
  • No reverse recovery charge
  • Reverse conduction capability
  • Ultralow gate and outputcharge
  • Qualfied according to JEDEC
  • Moisture rating MSL1

Benefits

  • Best-in-class power density
  • Highest efficiency
  • Improved thermal management
  • Enabling smaller and lighter designs
  • Excellent reliability
  • Lowering BOM cost

Applications

Documents

Design resources

Developer community