BSO080P03NS3 G

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs.
Data Sheet

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BSO080P03NS3 G
BSO080P03NS3 G
Data Sheet

Product details

  • Budgetary Price €/1k
    0.37
  • Ciss
    4500 pF
  • Coss
    2100 pF
  • ID (@25°C) max
    14.8 A
  • IDpuls max
    48 A
  • Operating Temperature max
    150 °C
  • Operating Temperature min
    -55 °C
  • Package
    SO-8
  • Polarity
    P
  • Ptot max
    1.6 W
  • QG (typ @10V)
    61 nC
  • RDS (on) (@10V) max
    8 mΩ
  • Rth
    110 K/W
  • VDS max
    -30 V
  • VGS(th)
    -2.5 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Features

  • Enhancement mode
  • Normal level, logic level or super logic level
  • Avalanche rated
  • Pb-free lead plating
  • RoHS compliant 

Applications

Documents

Documents

Design resources

Partner solutions

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