BSD314SPE

BSD314SPE

P-channel enhancement mode Field-Effect Transistor (FET), -100 V, SOT-223

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BSD314SPE
BSD314SPE


Product details

  • Ciss
    221 pF
  • Coss
    126 pF
  • ID (@25°C) max
    1.5 A
  • IDpuls max
    -6.1 A
  • Operating Temperature max
    150 °C
  • Operating Temperature min
    -55 °C
  • Package
    SOT-363
  • Polarity
    P
  • Ptot max
    0.5 W
  • QG (typ @10V)
    -2.9 nC
  • RDS (on) (@10V) max
    140 mΩ
  • Rth
    250 K/W
  • Special Features
    Small Signal
  • VDS max
    -30 V
  • VGS(th) range
    -1 V to -2 V

OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.

Features

  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating
  • RoHS compliant, halogen-free
  • Qualified according to automotive standards
  • PPAP capable

Benefits

  • Low RDS(on) provides higher efficiency and extends battery life
  • Small packages save PCB space
  • Best-in-class quality and reliability

Applications

Documents

Design resources

Developer community