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Infineon to establish the world’s first high-volume manufacturing facility for gallium nitride power semiconductors on 300-millimeter wafers in Europe
UnternehmerTUM Accelerator, Microsoft, Infineon Technologies, and NVIDIA Launch Physical AI Growth Lab for Europe's Most Promising Startups
Infineon collaborates with NVIDIA on gallium nitride-based power conversion systems for 800 VDC AI data centers
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×
Please note that this is an end of life product. See newer alternative product version
Please note that this is an end of life product. See newer alternative product version
View replacement
END OF LIFE
discontinued
RoHS Compliant
AUIRFSL8407
END OF LIFE
40 V, N-Ch, 1.8 mΩ max, Automotive MOSFET, TO262, Gen 12.7
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AUIRFSL8407
Product details
-
Budgetary Price €/1k3.84
-
ID (@25°C) max195 A
-
MountingTHT
-
Operating Temperature range-55 °C to 175 °C
-
PackageTO262
-
PolarityN
-
Ptot max230 W
-
Qgd51 nC
-
QG (typ @10V) max225 nC
-
QG (typ @10V)150 nC
-
QualificationAutomotive
-
RDS (on) (@10V) max1.8 mΩ
-
RthJC max0.65 K/W
-
TechnologyGen 12.7
-
Tj max175 °C
-
VDS max40 V
-
VGS(th) range2 V to 4 V
-
VGS(th)3 V
-
VGS max20 V
|
OPN
|
AUIRFSL8407 |
|---|---|
| Product Status | discontinued |
| Infineon Package | |
| Package Name | PG-TO262-3 |
| Packing Size | 1000 |
| Packing Type | TUBE |
| Moisture Level | NA |
| Moisture Packing | NON DRY |
| Lead-free | No |
| Halogen Free | Yes |
| RoHS Compliant | Yes |
| Country of Assembly (CoA) |
CN
|
| Country of Diffusion (CoD) |
DE,IL
|
|
|
|
| Product Status | discontinued |
|---|---|
| Infineon Package | |
| Package Name | PG-TO262-3 |
| Packing Size | 1000 |
| Packing Type | TUBE |
| Moisture Level | NA |
| Moisture Packing | NON DRY |
| Lead Free | |
| Halogen Free | |
| RoHS Compliant | |
| Country of Assembly (CoA) |
CN
|
| Country of Diffusion (CoD) |
DE,IL
|
Features
- Advanced Process Technology
- New Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
- Automotive Qualified
- PPAP Capable Device
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