EiceDRIVER™ isolated gate driver ICs for EV applications

Automotive-qualified isolated and non-isolated gate drivers enabling system optimization and increased efficiency

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Overview

Infineon offers a wide range of automotive-qualified isolated and non-isolated gate driver ICs covering the usage of MOSFET, IGBT, and SiC technologies used in applications up to 1200 V. Automotive EiceDRIVER™, referring to the isolated gate driver, uses a magnetically coupled coreless transformer technology and provides short propagation delays, excellent delay matching, and strong robustness for driving the IGBT and SiC power switches.

Key Features

  • Reinforced isolation
  • ISO 26262 compliance
  • Integrated ADC
  • Active short-circuit
  • Powerful output stages
  • Best fit for Infineon IGBT/SiC
  • Compact package design
  • Automotive qualified
  • Diagnosis & supervision

Products

About

3rd-generation isolated gate driver ICs for IGBT and SiC MOSFETs

Infineon's automotive qualified EiceDRIVER™ isolated gate driver ICs are galvanically isolated, single-channel gate driver ICs designed to drive IGBT and SiC MOSFET power switches in high-voltage xEV applications. They are optimized for the isolation and switching demands of 400 V and 800 V traction inverter platforms. The 1EDI30xxAS family is the 3rd generation of Infineon’s automotive isolated gate driver ICs. Infineon’s deep expertise and extensive product range enable the integration of key functions directly into the gate driver, allowing customers to achieve higher inverter efficiency and increased performance, combined with more compact layouts and shorter design cycles.

The latest addition is the 1EDI304xAS family. These products target high-performance traction inverters requiring ISO 26262-compliance up to ASIL D, advanced slew rate control, and optional integrated flyback controller functionality.

All devices are built on Infineon's coreless transformer (CT) isolation technology, are AEC-Q100 qualified, and support ISO 26262 functional safety requirements up to ASIL D.

Why engineers select isolated gate drivers for xEV design

Reduced Short-Circuit Risk with Tunable Protection: The latest 1EDI30xxAS families provide tunable soft-off functionality for enhanced short-circuit robustness, integrated DESAT and OCP self-test diagnostics (BIST), and safe-state interfaces, reducing the external protection circuitry required and simplifying functional safety implementation up to ASIL D.

Up to 35% Inverter Loss Reduction with Fewer External Components: The 1EDI304xAS integrates multi-level slew rate control, dynamic boost modes, and SPI-based configuration into a single IC, enabling partial-load inverter loss reduction over WLTP drive cycles, reduced harmonic distortion, and faster development cycles with a lower component count.

On-the-Fly Gate Supply Adjustment Increases Power-Stage Utilization: The 1EDI3040AS integrates a closed-loop flyback controller with less than 2% VCC2 regulation accuracy, enabling runtime VCC2 adjustment to lower SiC RDS(on) and increase peak current capability, extracting more usable performance from a given power stage.

Isolation voltage, CMTI, output current, and propagation delay

Isolation Voltage (VIORM): VIORM is the rated repetitive peak isolation voltage the galvanic barrier can continuously withstand between primary and secondary sides. Insufficient VIORM in high-voltage xEV designs risks destructive breakdown between the control domain and the power stage. The 3rd-generation portfolio provides more than 1700 V VIORM.

Common-Mode Transient Immunity (CMTI): CMTI is the maximum dV/dt an isolated gate driver can withstand without producing a spurious output transition. High CMTI is a critical selection criterion for SiC-based designs. The 1EDI304xAS achieves CMTI greater than 150 V/ns.

Output Peak Current (Io): Io determines how quickly the gate driver charges and discharges the power switch gate capacitance, directly setting switching speed and losses. The portfolio provides up to 20 A output drive current (15 A for 1EDI3028AS and 1EDI3038AS variants).

Propagation Delay (tpd): Lower tpd reduces minimum dead time in half-bridge topologies, improving efficiency at high switching frequencies. 

AEC-Q100 qualification, ASIL D compliance, and switching performance

  • AEC-Q100 Grade 1 Qualification with 260°C Peak Reflow Capability: Infineon’s 1EDI30xxAS isolated gate drivers are qualified to Automotive Electronics Council Q100 (AEC-Q100) standards using a RoHS-compliant package rated to 260°C peak reflow temperature.
  • ISO 26262 Functional Safety up to ASIL D: The 1EDI304xAS achieves ASIL D compliance through integrated DESAT and OCP BIST, safe-state inputs on primary and secondary sides, internal supervision, and power stage monitoring via the DOUT pin. The 1EDI302xAS and 1EDI303xAS families achieve ASIL B compliance.
  • Up to 35% Partial-Load Inverter Loss Reduction over WLTP: Multi-level slew rate control in the 1EDI304xAS enables adaptive gate drive strength across drive cycle operating points, reducing partial-load inverter switching losses by up to 35%. Dynamic boost modes further minimize dead times, reducing total harmonic distortion (THD) in the inverter output.
  • Smart DESAT Protection with Less Than 1 µs Response: Digital DESAT filtering combined with tunable soft-off functionality achieves short-circuit detection and turn-off in under 1 microsecond, protecting SiC MOSFETs and IGBTs during hard-switching fault events.

Automotive qualified, isolated gate driver ICs for traction inverters

High-Performance BEV Traction Inverters: 1EDI30xxAS isolated gate driver ICs support demanding traction inverter applications in battery electric vehicles. The latest family member 1EDI304xAS comes with integrated flyback controller options and multi-level slew rate control to maximize utilization in high-power SiC-based designs. Additionally, unique feature integration reduces the traction inverter BOM and driver board size. These gate drivers for electric vehicle applications require reinforced galvanic isolation and ISO 26262 functional safety compliance.

PHEV/REEV Traction Inverters and Second-Axle Traction Inverters: The very compact 1EDI302xAS (IGBT) and 1EDI303xAS (SiC) families serve PHEV/REEV and second-axle inverter platforms, providing ASIL B compliance and up to 20 A output drive in the compact DSO-20 package.

Five steps to selecting an automotive isolated gate driver IC

Step 1: Define the Power Switch Technology. Select the 1EDI302xAS / 1EDI304xAS for IGBT applications or the 1EDI303xAS/1EDI304xAS for SiC MOSFET applications.

Step 2: Determine Configurability. 1EDI304xAS comes with rich feature integration and an SPI interface, thereby simplifying customers’ platform approaches and providing one device for IGBT & SiC. 1EDI302xAS / 1EDI303xAS are pre-configured either for SiC or IGBT. Pin-compatible devices enable a platform approach.

Step 3: Determine the Required ASIL Level. Select the 1EDI304xAS for ASIL D applications; select the 1EDI302xAS or 1EDI303xAS for ASIL B applications in the cost-optimized DSO-20 package.

Step 4: Assess Gate Drive Slew Rate Control Needs. Select the 1EDI304xAS if multi-level slew rate control is required.

Step 5: Evaluate Flyback Controller Integration. If an isolated secondary-side supply is required, the 1EDI3040AS integrates a closed-loop flyback controller with less than 2% VCC2 accuracy, removing the need for external pre-regulator, post-regulator, and flyback controller ICs.

Coreless transformer technology, AEC-Q100, and longevity program

  • Coreless Transformer (CT) Isolation Technology: Infineon's proprietary coreless transformer technology delivers bidirectional signal transfer across galvanic isolation without a magnetic core, proven in EiceDRIVER™ products for more than 15 years in high-EMC automotive environments.
  • AEC-Q100 Qualification and Zero-Defect Manufacturing: Infineon’s isolated gate driver ICs for xEV applications are qualified to AEC-Q100 standards under the zero-defect quality program, achieving low PPM field failure rates across automotive powertrain applications. This qualification level confirms suitability for under-hood and powertrain environments throughout the product lifecycle.
  • ISO 26262 Safety Documentation via myICP: A safety manual and a safety analysis report are available through the myInfineon Collaboration Platform (myICP) after registration and partner-status elevation via an Infineon sales contact.
  • Infineon Smart Power Longevity Program and System Ecosystem: Automotive isolated gate driver ICs are covered by Infineon's Smart Power Longevity Program, providing long-term product availability commitments that reduce lifecycle risk for extended production horizons.
  • Infineon’s unique combination of 15 years of isolated gate driver expertise and extensive traction inverter application knowledge enables us to integrate key functions directly in the gate driver, allowing customers to achieve higher inverter efficiency and increased performance combined with more compact layouts and shorter design cycles.

Software tools, evaluation boards, and application notes

Infineon’s automotive qualified EiceDRIVER™ isolated gate driver IC product range comes with various software packages and tools to support the gate driver IC evaluation and design-in. On the respective product pages, you will also find an overview of all design resources available, including application notes, safety documentation, evaluation boards with user guides and online training videos.

Software

EiceDRIVER™ 1EDI3040AS application software

EiceDRIVER™ 1EDI304x Complex Device Driver

EiceDRIVER™ 1EDI304x Device Driver

Also available as a software bundle

Tools

EiceDRIVER™ AMC Configuration Wizard

Infineon Academy

Discover the online training courses that provide fundamental knowledge about the EiceDRIVER™ isolated gate driver IC portfolio.

 

3rd-generation isolated gate driver ICs for IGBT and SiC MOSFETs

Infineon's automotive qualified EiceDRIVER™ isolated gate driver ICs are galvanically isolated, single-channel gate driver ICs designed to drive IGBT and SiC MOSFET power switches in high-voltage xEV applications. They are optimized for the isolation and switching demands of 400 V and 800 V traction inverter platforms. The 1EDI30xxAS family is the 3rd generation of Infineon’s automotive isolated gate driver ICs. Infineon’s deep expertise and extensive product range enable the integration of key functions directly into the gate driver, allowing customers to achieve higher inverter efficiency and increased performance, combined with more compact layouts and shorter design cycles.

The latest addition is the 1EDI304xAS family. These products target high-performance traction inverters requiring ISO 26262-compliance up to ASIL D, advanced slew rate control, and optional integrated flyback controller functionality.

All devices are built on Infineon's coreless transformer (CT) isolation technology, are AEC-Q100 qualified, and support ISO 26262 functional safety requirements up to ASIL D.

Why engineers select isolated gate drivers for xEV design

Reduced Short-Circuit Risk with Tunable Protection: The latest 1EDI30xxAS families provide tunable soft-off functionality for enhanced short-circuit robustness, integrated DESAT and OCP self-test diagnostics (BIST), and safe-state interfaces, reducing the external protection circuitry required and simplifying functional safety implementation up to ASIL D.

Up to 35% Inverter Loss Reduction with Fewer External Components: The 1EDI304xAS integrates multi-level slew rate control, dynamic boost modes, and SPI-based configuration into a single IC, enabling partial-load inverter loss reduction over WLTP drive cycles, reduced harmonic distortion, and faster development cycles with a lower component count.

On-the-Fly Gate Supply Adjustment Increases Power-Stage Utilization: The 1EDI3040AS integrates a closed-loop flyback controller with less than 2% VCC2 regulation accuracy, enabling runtime VCC2 adjustment to lower SiC RDS(on) and increase peak current capability, extracting more usable performance from a given power stage.

Isolation voltage, CMTI, output current, and propagation delay

Isolation Voltage (VIORM): VIORM is the rated repetitive peak isolation voltage the galvanic barrier can continuously withstand between primary and secondary sides. Insufficient VIORM in high-voltage xEV designs risks destructive breakdown between the control domain and the power stage. The 3rd-generation portfolio provides more than 1700 V VIORM.

Common-Mode Transient Immunity (CMTI): CMTI is the maximum dV/dt an isolated gate driver can withstand without producing a spurious output transition. High CMTI is a critical selection criterion for SiC-based designs. The 1EDI304xAS achieves CMTI greater than 150 V/ns.

Output Peak Current (Io): Io determines how quickly the gate driver charges and discharges the power switch gate capacitance, directly setting switching speed and losses. The portfolio provides up to 20 A output drive current (15 A for 1EDI3028AS and 1EDI3038AS variants).

Propagation Delay (tpd): Lower tpd reduces minimum dead time in half-bridge topologies, improving efficiency at high switching frequencies. 

AEC-Q100 qualification, ASIL D compliance, and switching performance

  • AEC-Q100 Grade 1 Qualification with 260°C Peak Reflow Capability: Infineon’s 1EDI30xxAS isolated gate drivers are qualified to Automotive Electronics Council Q100 (AEC-Q100) standards using a RoHS-compliant package rated to 260°C peak reflow temperature.
  • ISO 26262 Functional Safety up to ASIL D: The 1EDI304xAS achieves ASIL D compliance through integrated DESAT and OCP BIST, safe-state inputs on primary and secondary sides, internal supervision, and power stage monitoring via the DOUT pin. The 1EDI302xAS and 1EDI303xAS families achieve ASIL B compliance.
  • Up to 35% Partial-Load Inverter Loss Reduction over WLTP: Multi-level slew rate control in the 1EDI304xAS enables adaptive gate drive strength across drive cycle operating points, reducing partial-load inverter switching losses by up to 35%. Dynamic boost modes further minimize dead times, reducing total harmonic distortion (THD) in the inverter output.
  • Smart DESAT Protection with Less Than 1 µs Response: Digital DESAT filtering combined with tunable soft-off functionality achieves short-circuit detection and turn-off in under 1 microsecond, protecting SiC MOSFETs and IGBTs during hard-switching fault events.

Automotive qualified, isolated gate driver ICs for traction inverters

High-Performance BEV Traction Inverters: 1EDI30xxAS isolated gate driver ICs support demanding traction inverter applications in battery electric vehicles. The latest family member 1EDI304xAS comes with integrated flyback controller options and multi-level slew rate control to maximize utilization in high-power SiC-based designs. Additionally, unique feature integration reduces the traction inverter BOM and driver board size. These gate drivers for electric vehicle applications require reinforced galvanic isolation and ISO 26262 functional safety compliance.

PHEV/REEV Traction Inverters and Second-Axle Traction Inverters: The very compact 1EDI302xAS (IGBT) and 1EDI303xAS (SiC) families serve PHEV/REEV and second-axle inverter platforms, providing ASIL B compliance and up to 20 A output drive in the compact DSO-20 package.

Five steps to selecting an automotive isolated gate driver IC

Step 1: Define the Power Switch Technology. Select the 1EDI302xAS / 1EDI304xAS for IGBT applications or the 1EDI303xAS/1EDI304xAS for SiC MOSFET applications.

Step 2: Determine Configurability. 1EDI304xAS comes with rich feature integration and an SPI interface, thereby simplifying customers’ platform approaches and providing one device for IGBT & SiC. 1EDI302xAS / 1EDI303xAS are pre-configured either for SiC or IGBT. Pin-compatible devices enable a platform approach.

Step 3: Determine the Required ASIL Level. Select the 1EDI304xAS for ASIL D applications; select the 1EDI302xAS or 1EDI303xAS for ASIL B applications in the cost-optimized DSO-20 package.

Step 4: Assess Gate Drive Slew Rate Control Needs. Select the 1EDI304xAS if multi-level slew rate control is required.

Step 5: Evaluate Flyback Controller Integration. If an isolated secondary-side supply is required, the 1EDI3040AS integrates a closed-loop flyback controller with less than 2% VCC2 accuracy, removing the need for external pre-regulator, post-regulator, and flyback controller ICs.

Coreless transformer technology, AEC-Q100, and longevity program

  • Coreless Transformer (CT) Isolation Technology: Infineon's proprietary coreless transformer technology delivers bidirectional signal transfer across galvanic isolation without a magnetic core, proven in EiceDRIVER™ products for more than 15 years in high-EMC automotive environments.
  • AEC-Q100 Qualification and Zero-Defect Manufacturing: Infineon’s isolated gate driver ICs for xEV applications are qualified to AEC-Q100 standards under the zero-defect quality program, achieving low PPM field failure rates across automotive powertrain applications. This qualification level confirms suitability for under-hood and powertrain environments throughout the product lifecycle.
  • ISO 26262 Safety Documentation via myICP: A safety manual and a safety analysis report are available through the myInfineon Collaboration Platform (myICP) after registration and partner-status elevation via an Infineon sales contact.
  • Infineon Smart Power Longevity Program and System Ecosystem: Automotive isolated gate driver ICs are covered by Infineon's Smart Power Longevity Program, providing long-term product availability commitments that reduce lifecycle risk for extended production horizons.
  • Infineon’s unique combination of 15 years of isolated gate driver expertise and extensive traction inverter application knowledge enables us to integrate key functions directly in the gate driver, allowing customers to achieve higher inverter efficiency and increased performance combined with more compact layouts and shorter design cycles.

Software tools, evaluation boards, and application notes

Infineon’s automotive qualified EiceDRIVER™ isolated gate driver IC product range comes with various software packages and tools to support the gate driver IC evaluation and design-in. On the respective product pages, you will also find an overview of all design resources available, including application notes, safety documentation, evaluation boards with user guides and online training videos.

Software

EiceDRIVER™ 1EDI3040AS application software

EiceDRIVER™ 1EDI304x Complex Device Driver

EiceDRIVER™ 1EDI304x Device Driver

Also available as a software bundle

Tools

EiceDRIVER™ AMC Configuration Wizard

Infineon Academy

Discover the online training courses that provide fundamental knowledge about the EiceDRIVER™ isolated gate driver IC portfolio.

 

Documents

Design resources

Developer community