Accelerating Automotive electrification with high-performance IGBT bare dies

The insulated-gate bipolar transistor (IGBT) is a type of semiconductor device that plays a crucial role in power electronics. By combining the benefits of both MOSFETs and bipolar transistors, IGBTs offer a high-performance switching element that excels in various applications.

Infineons Si IGBT and Diode technology is designed to meet the demanding requirements of automotive applications. With its high voltage and high current-carrying capabilities, along with efficient switching performance, our Si IGBTs and Diodes are the best fit for various automotive systems such as electric powertrains.

With a focus on reliability, ruggedness, and optimized thermal performance, our Si IGBTs and Diodes are helping to drive the future of automotive electrification.

Explore our range of Si IGBT and Diode solutions and discover how they can elevate the performance and efficiency of your automotive designs!

Market insights: The growing importance of Si bare dies in Automotive and beyond

The Si IGBT market has been experiencing significant growth, driven by the increasing demand for energy-efficient solutions across various industries especially in automotive. Si bare dies have established themselves as essential components in power electronics due to their high voltage and current-handling capabilities, making them suitable for a wide range of applications such as motor drives, inverters, and power supplies.

The automotive industry has seen a growing adoption of Si bare dies in electric and hybrid vehicles, where the need for efficient power conversion is paramount. With advancements in Si IGBT and Diode technology and packaging, these devices continue to offer cost-effective solutions for automotive powertrain systems and battery management, contributing to the overall electrification of vehicles.

Si bare dies remain a vital and cost-effective choice for a wide range of power electronics applications, serving as a cornerstone in the ongoing drive towards energy efficiency and sustainability.

Market Insights: The Growing Importance of Si Bare Dies in Automotive and Beyond

Advantages of Si bare dies in traction inverters

Silicon Bare Dies have long been employed in DC-powered AC motor drives due to their high current carrying capability, rapid switching speed, and cost-effectiveness. These devices offer specific benefits such as high rated voltages coupled with low conduction losses at high currents, making them seemingly well-suited for high-power motor drive applications.

Si bare dies offer, due to their bipolar conduction behavior, low conduction losses at high load, which is the decisive design point in many applications defining the chip size, thus making IGBTs and Diodes an attractive choice.

Therefore, Si IGBT bare dies are an interesting choice especially in applications where the system cost benefits at high load currents are imperative. This includes secondary (“boost axle”) inverters and cars with smaller batteries.

ev-3d-bms-focus-ocean-transparent

Advantages of our Si bare dies at a glance

  • Maximum output current: Especially under high load conditions (e.g. primary axle or boost axle application) Si IGBTs have low losses and can therefore handle high output currents.
  • Cost-effectiveness: Si IGBTs are generally more cost-effective compared to other power semiconductor devices such as SiC MOSFETs, making them a preferred choice for applications where cost is a primary consideration.
  • Established manufacturing infrastructure: The manufacturing processes for Si IGBTs are well-established, leading to consistent production and supply chain reliability.
  • Robustness: Si IGBTs have demonstrated robust performance in various applications, particularly in industrial and automotive systems, where ruggedness is essential.
  • Easy drive and control: Si IGBTs are well known and are easy to control, making them more suitable for certain applications.
  • Si IGBTs are designed for smooth switching free of oscillations giving the designer benefits in terms of electromagnetic compatibility (EMC).

Market requirements

When it comes to market requirements for Si IGBT bare dies, there is a growing need for efficient and reliable power switching solutions across various industries such as automotive, renewable energy, industrial automation, and consumer electronics. With the increasing demand for energy-efficient devices and the transition towards electric vehicles and renewable energy sources, there is a significant market requirement for high-performance Si IGBTs that can handle high voltages and currents while maintaining low losses and high reliability.

dresden-cleanroom-300mm

Value Proposition

In response to these market requirements, the value proposition of our EDT3 750V lies in its ability to provide high voltage and current handling capabilities with low conduction and switching losses. This is essential for applications requiring efficient power conversion and control, such as motor drives, inverters, and power supplies. Additionally, our EDT3 750V offers a cost-effective solution compared to alternative technologies, making them an attractive choice for manufacturers aiming to optimize the performance and cost-efficiency of their products.

Ready for more? Check out our available products here!

Market requirements

The increasing demand for energy efficiency, reliability, and compactness in industrial and automotive systems has driven the need for high-performance power semiconductor devices. Our EDT3 1200V Si IGBT and Diodes are designed to meet these market requirements, offering a unique combination of high voltage capability, low losses, and ruggedness.

In the automotive sector, our 1200V Si bare dies are particularly suited for electric vehicle charging systems, traction inverters, and other high-power applications, where its high voltage capability and low losses ensure efficient and reliable operation.

200mm-wafer

Value proposition

The value proposition of our EDT3 1200V Si bare dies lies in its ability to provide a high level of performance, reliability, and flexibility, while reducing system complexity and cost. With its optimized design and advanced manufacturing process, this device offers a unique balance of low conduction and switching losses, high short-circuit ruggedness, and excellent thermal performance. This enables system designers to develop more efficient, compact, and reliable systems, while reducing their overall bill of materials and development time.

You will soon find more information about our new products here! Stay tuned!

Market requirements

The increasing demand for high-reliability and fault-tolerant power semiconductor devices has driven the need for advanced IGBT technologies. Our 1200V RC-IGBT is designed to meet these market requirements, offering a unique combination of high voltage capability, low losses, and exceptional ruggedness and reliability.

In the automotive sector, our 1200V RC-IGBT are particularly suited for electric vehicle charging systems, traction inverters, and other high-power applications, where its high voltage capability and exceptional ruggedness ensure reliable operation.

dresden-cleanroom-300mm

Value Proposition

The value proposition of our 1200V RC-IGBT lies in its ability to provide a high level of reliability, ruggedness, and fault tolerance, while reducing system complexity and cost. With its advanced Reverse-Conducting IGBT (RC-IGBT) design, this device offers a unique combination of low conduction and switching losses, high short-circuit ruggedness, and excellent thermal performance. This enables system designers to develop more reliable, compact, and efficient systems, while reducing their overall bill of materials and development time.

You will soon find more information about our new products here! Stay tuned!

Accelerating Automotive electrification with high-performance IGBT bare dies

The insulated-gate bipolar transistor (IGBT) is a type of semiconductor device that plays a crucial role in power electronics. By combining the benefits of both MOSFETs and bipolar transistors, IGBTs offer a high-performance switching element that excels in various applications.

Infineons Si IGBT and Diode technology is designed to meet the demanding requirements of automotive applications. With its high voltage and high current-carrying capabilities, along with efficient switching performance, our Si IGBTs and Diodes are the best fit for various automotive systems such as electric powertrains.

With a focus on reliability, ruggedness, and optimized thermal performance, our Si IGBTs and Diodes are helping to drive the future of automotive electrification.

Explore our range of Si IGBT and Diode solutions and discover how they can elevate the performance and efficiency of your automotive designs!

Market insights: The growing importance of Si bare dies in Automotive and beyond

The Si IGBT market has been experiencing significant growth, driven by the increasing demand for energy-efficient solutions across various industries especially in automotive. Si bare dies have established themselves as essential components in power electronics due to their high voltage and current-handling capabilities, making them suitable for a wide range of applications such as motor drives, inverters, and power supplies.

The automotive industry has seen a growing adoption of Si bare dies in electric and hybrid vehicles, where the need for efficient power conversion is paramount. With advancements in Si IGBT and Diode technology and packaging, these devices continue to offer cost-effective solutions for automotive powertrain systems and battery management, contributing to the overall electrification of vehicles.

Si bare dies remain a vital and cost-effective choice for a wide range of power electronics applications, serving as a cornerstone in the ongoing drive towards energy efficiency and sustainability.

Market Insights: The Growing Importance of Si Bare Dies in Automotive and Beyond

Advantages of Si bare dies in traction inverters

Silicon Bare Dies have long been employed in DC-powered AC motor drives due to their high current carrying capability, rapid switching speed, and cost-effectiveness. These devices offer specific benefits such as high rated voltages coupled with low conduction losses at high currents, making them seemingly well-suited for high-power motor drive applications.

Si bare dies offer, due to their bipolar conduction behavior, low conduction losses at high load, which is the decisive design point in many applications defining the chip size, thus making IGBTs and Diodes an attractive choice.

Therefore, Si IGBT bare dies are an interesting choice especially in applications where the system cost benefits at high load currents are imperative. This includes secondary (“boost axle”) inverters and cars with smaller batteries.

ev-3d-bms-focus-ocean-transparent

Advantages of our Si bare dies at a glance

  • Maximum output current: Especially under high load conditions (e.g. primary axle or boost axle application) Si IGBTs have low losses and can therefore handle high output currents.
  • Cost-effectiveness: Si IGBTs are generally more cost-effective compared to other power semiconductor devices such as SiC MOSFETs, making them a preferred choice for applications where cost is a primary consideration.
  • Established manufacturing infrastructure: The manufacturing processes for Si IGBTs are well-established, leading to consistent production and supply chain reliability.
  • Robustness: Si IGBTs have demonstrated robust performance in various applications, particularly in industrial and automotive systems, where ruggedness is essential.
  • Easy drive and control: Si IGBTs are well known and are easy to control, making them more suitable for certain applications.
  • Si IGBTs are designed for smooth switching free of oscillations giving the designer benefits in terms of electromagnetic compatibility (EMC).

Market requirements

When it comes to market requirements for Si IGBT bare dies, there is a growing need for efficient and reliable power switching solutions across various industries such as automotive, renewable energy, industrial automation, and consumer electronics. With the increasing demand for energy-efficient devices and the transition towards electric vehicles and renewable energy sources, there is a significant market requirement for high-performance Si IGBTs that can handle high voltages and currents while maintaining low losses and high reliability.

dresden-cleanroom-300mm

Value Proposition

In response to these market requirements, the value proposition of our EDT3 750V lies in its ability to provide high voltage and current handling capabilities with low conduction and switching losses. This is essential for applications requiring efficient power conversion and control, such as motor drives, inverters, and power supplies. Additionally, our EDT3 750V offers a cost-effective solution compared to alternative technologies, making them an attractive choice for manufacturers aiming to optimize the performance and cost-efficiency of their products.

Ready for more? Check out our available products here!

Market requirements

The increasing demand for energy efficiency, reliability, and compactness in industrial and automotive systems has driven the need for high-performance power semiconductor devices. Our EDT3 1200V Si IGBT and Diodes are designed to meet these market requirements, offering a unique combination of high voltage capability, low losses, and ruggedness.

In the automotive sector, our 1200V Si bare dies are particularly suited for electric vehicle charging systems, traction inverters, and other high-power applications, where its high voltage capability and low losses ensure efficient and reliable operation.

200mm-wafer

Value proposition

The value proposition of our EDT3 1200V Si bare dies lies in its ability to provide a high level of performance, reliability, and flexibility, while reducing system complexity and cost. With its optimized design and advanced manufacturing process, this device offers a unique balance of low conduction and switching losses, high short-circuit ruggedness, and excellent thermal performance. This enables system designers to develop more efficient, compact, and reliable systems, while reducing their overall bill of materials and development time.

You will soon find more information about our new products here! Stay tuned!

Market requirements

The increasing demand for high-reliability and fault-tolerant power semiconductor devices has driven the need for advanced IGBT technologies. Our 1200V RC-IGBT is designed to meet these market requirements, offering a unique combination of high voltage capability, low losses, and exceptional ruggedness and reliability.

In the automotive sector, our 1200V RC-IGBT are particularly suited for electric vehicle charging systems, traction inverters, and other high-power applications, where its high voltage capability and exceptional ruggedness ensure reliable operation.

dresden-cleanroom-300mm

Value Proposition

The value proposition of our 1200V RC-IGBT lies in its ability to provide a high level of reliability, ruggedness, and fault tolerance, while reducing system complexity and cost. With its advanced Reverse-Conducting IGBT (RC-IGBT) design, this device offers a unique combination of low conduction and switching losses, high short-circuit ruggedness, and excellent thermal performance. This enables system designers to develop more reliable, compact, and efficient systems, while reducing their overall bill of materials and development time.

You will soon find more information about our new products here! Stay tuned!