CoolSiC™ 1200V SiC JFET & Direct Drive Technology
The revolutionary CoolSiC™ 1200V SiC JFET family, in combination with the proposed Direct Drive Technology, represents Infineon’s leading edge solution to bring actual designs towards new and so far unattainable efficiency levels. The new SiC JFET consistently reduces the switching losses with respect to the available IGBT based silicon devices and even the conduction losses when its ohmic characteristics are fully exploited.
Utmost efficiency at highest power density levels can be reached also thanks to Infineon’s CoolSiC™ monolithically integrated body diode, showing a switching performance comparable with that of an external SiC Schottky barrier diode. The Infineon SiC JFET, with its ultrafast body diode and dedicated Driver IC, represents the best solution for Solar, UPS and Industrial Drives applications by combining best performance, reliability, safety and ease of use.
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