Automotive MOSFET

Wide range of Automotive MOSFETs (30 V – 300 V, 600 V - 800 V) in a variety of robust packages for automotive applications - qualified beyond AEC-Q101

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Overview

Explore Infineon's automotive-qualified OptiMOS™ and CoolMOS™ power MOSFETs, available in a variety of packages for automotive applications. Infineon's OptiMOS™ 7 trench technology enables high power efficiency, reduced switching losses, and increased SOA for high-current applications, in combination with lead-less and top-side-cooled packages.

Key Features

  • High reliability
  • Low RDS(on)
  • Robust thermal performance
  • Gate robustness
  • Fast switching speeds
  • AEC-Q101 qualified
Automotive MOSFET package selection tree

Products

About

30 V to 800 V: OptiMOS™ and CoolMOS™ automotive families

Infineon automotive power MOSFETs are qualified beyond AEC-Q101 and PPAP-capable power switching devices spanning 30 V to 800 V, designed for 12 V, 48 V, and high-voltage automotive board net applications.

The portfolio covers two technology groups:

and are available in N-channel, P-channel, and dual-channel configurations.

OptiMOS™ generations 5, 6, and 7 address low- and mid-voltage board net switching in lead-less (S3O8, the single, dual and half-bridge versions of SSO8, sTOLL and TOLL), leaded (DPAK, D2PAK, TO220, I2PAK), and top-side-cooled (SSO10T, TOLT) packages. CoolMOS™ CPA, CFDA, CFD7A, and C3A cover 600 V to 800 V high-voltage automotive systems.

All products are supported by Infineon's longevity program for long-term supply assurance.

Longevity program

AEC-Q101 qualification, low RDS(on), and full board-net coverage

  • Beyond AEC-Q101 qualification and PPAP capability: All Infineon automotive MOSFETs are qualified beyond AEC-Q101 and are PPAP-capable, reducing qualification effort and design-in risk for Tier-1 automotive suppliers across all voltage classes.
  • Low RDS(on) across voltage classes: OptiMOS™ 5 delivers up to 25% RDS(on) reduction versus the prior generation at 150 V, with a minimum example of 1.15 mΩ at 80 V. OptiMOS™ 6 achieves 2.5 mΩ at 150 V. This reduces conduction loss in high-current switching paths.
  • 100% avalanche tested for ruggedness: OptiMOS™ 7 devices are 100% avalanche tested, providing verified ruggedness for automotive load conditions including inductive switching and load dump events.
  • Single-supplier coverage from 12 V to high-voltage automotive systems: OptiMOS™ and CoolMOS™ families cover 12 V body control through to 800 V high-voltage automotive systems, enabling a single-supplier strategy across the full automotive voltage range.

VDS, RDS(on), drain current, gate charge, and VGS(th)

Breakdown voltage (VDS(max)): VDS(max) must exceed the peak bus voltage including transients. The portfolio covers 30 V for 12 V board net applications up to 800 V for high-voltage powertrain designs.

On-state resistance (RDS(on)): RDS(on) determines conduction loss during the on-state. Lower values reduce heat generation in high-current paths. The OptiMOS™ portfolio spans 0.39 mΩ to 430 mΩ, and the CoolMOS™ portfolio spans 10 mΩ to 2.7 Ω (2,700 mΩ).

Continuous drain current (ID at 25°C): ID defines the maximum continuous current at 25°C. The portfolio covers 5 A to 510 A, from body control actuators to powertrain switches.

Gate charge (QG, QGD, QGS): Gate charge parameters are the primary inputs for switching loss calculations. Lower QG reduces gate driver power consumption at high switching frequencies.

Reverse recovery charge (Qrr): Qrr determines commutation ruggedness in bridge topologies. OptiMOS™ 5 and 6 deliver reduced Qrr versus prior generations, with the lowest Qrr in SuperSO8 at 26 nC at 150 V.

Go to Infineon MOSFET finder

Efficiency, ruggedness, and automotive qualification data

  • Operating temperature range

OptiMOS™ 5 automotive devices are rated up to 175°C maximum junction temperature. OptiMOS™ 6 and OptiMOS™ 7 families are rated from –40°C to +150°C. All families cover the full automotive ambient range, including underhood environments.

  • AEC-Q101 qualification

All products are qualified beyond AEC-Q101 and are PPAP-capable, exceeding the standard's requirements for automotive reliability and lifetime performance.

  • RoHS and environmental compliance

All OptiMOS™ 7 products are Pb-free, RoHS-compliant, and halogen-free per IEC 61249-2-21.

12 V body control, 48 V mild hybrid, and HV automotive applications                                                                          

12 V board net: Body control, motor drives, and battery management

For 12 V board net load switching, motor drives, and battery management, the 30 V to 60 V OptiMOS™ 5, 6, and 7 series in S3O8, SSO8, and SuperSO8 packages is recommended for low RDS(on) and compact footprint.

48 V mild hybrid DC-DC conversion and motor drive

For 48 V DC-DC converters and belt-integrated starter-generator drives, the 80 V to 120 V OptiMOS™ 5 and 6 series in TOLL, TOLG, and TOLT packages delivers the current capability and switching performance required for bidirectional power conversion.

High-voltage automotive applications

For high-voltage automotive applications including on-board chargers and HV DC-DC converters, the 600 V to 800 V CoolMOS™ CPA, CFDA, CFD7A, and C3A series addresses automotive SMPS topologies.

Automotive body control module
Automotive battery management system

Step-by-step automotive MOSFET selection guide

  • Step 1: Determine the bus voltage class

Select VDS(max) to exceed the maximum bus voltage including transients: 30 V to 60 V for 12 V systems, 80 V to 120 V for 48 V systems, 600 V to 800 V for high-voltage automotive applications.

  • Step 2: Select the technology generation

Use OptiMOS™ 7 for 55 V to 100 V nodes requiring the lowest RDS(on) x A footprint. Use OptiMOS™ 6 for 150 V to 200 V nodes. Use OptiMOS™ 5 for 60 V to 150 V where Qrr reduction is a priority.

  • Step 3: Determine the maximum allowable RDS(on)

Calculate from the power dissipation budget and package thermal resistance. RDS(on) is specified at VGS = 10 V standard or 4.5 V for logic-level gate drive.

  • Step 4: Evaluate gate charge against switching frequency.

Minimize QG for high-frequency DC-DC converters. For low-frequency load switches, prioritize lower RDS(on) over QG.

  • Step 5: Select the package based on thermal constraints

Use lead-less packages (S3O8, SSO8, TOLL) for smallest footprint, TOLT or SSO10T for top-side cooling, and leaded packages (DPAK, D2PAK, TO220) for clip-mounted solutions.

 

Use the Automotive MOSFET parametric selection tool to filter by voltage, RDS(on), current, and package.

OptiMOS™ and CoolMOS™ technology, AEC-Q100 qualification, and longevity support

  • OptiMOS™ and CoolMOS™ process technology

Infineon's OptiMOS™ and CoolMOS™ automotive MOSFET families share a common automotive qualification framework, providing a single-supplier platform from 12 V body control to 800 V high-voltage automotive systems without requiring a technology or supplier change between voltage classes.

  • AEC-Q101 qualification

All products carry an AEC-Q101 qualification from -55°C to 175°C, documented in individual datasheets.

  •  Quality and reliability beyond AEC-Q101

Automotive applications demand power MOSFETs that deliver reliable performance over long product lifetimes and under challenging operating conditions. Infineon Automotive MOSFETs are developed with quality as a core design principle, from requirement definition and technology development to qualification, production control, and continuous improvement.

Infineon goes beyond standard automotive qualification requirements with extended stress testing, enhanced screening, strict qualification criteria, and continuous reliability monitoring. This quality approach supports lower failure rates, robust product ramp-up, and reliable performance across automotive applications.

For customers, this means more confidence during design-in and production: proven automotive qualification, robust package technologies, access to Product Qualification Reports, and FIT reports that support reliability assessment at product level. For further information click here.

  • Automotive MOSFET longevity program

Infineon's longevity program provides long-term product availability commitments, reducing redesign risk for multi-year automotive production programs.

OptiMOS™ & StrongIRFET™ family selection

Software, simulation models, reference designs, and training

Infineon provides a comprehensive set of design-in resources for automotive MOSFETs. Simulation models for SPICE and online simulation tools (Infineon Designer, InfineonSpice Desktop Circuit Simulator) support circuit-level development, investigation, and verification across key automotive topologies. Infineon provides MOSFET design files supporting the PCB layout for several environments. Reference designs cover as inverter, DC motor control, DCDC converter and power distribution.

A library of training videos, application notes and other documentation covers topics to MOSFET’s data sheet interpretation, key and application-specific design considerations, guidance on MOSFET assembly, thermal performance and heat management, SPICE model usage, and MOSFET selection aids. All training materials are available through the Infineon Academy learning platform, with more than 600 courses accessible free of charge.

30 V to 800 V: OptiMOS™ and CoolMOS™ automotive families

Infineon automotive power MOSFETs are qualified beyond AEC-Q101 and PPAP-capable power switching devices spanning 30 V to 800 V, designed for 12 V, 48 V, and high-voltage automotive board net applications.

The portfolio covers two technology groups:

and are available in N-channel, P-channel, and dual-channel configurations.

OptiMOS™ generations 5, 6, and 7 address low- and mid-voltage board net switching in lead-less (S3O8, the single, dual and half-bridge versions of SSO8, sTOLL and TOLL), leaded (DPAK, D2PAK, TO220, I2PAK), and top-side-cooled (SSO10T, TOLT) packages. CoolMOS™ CPA, CFDA, CFD7A, and C3A cover 600 V to 800 V high-voltage automotive systems.

All products are supported by Infineon's longevity program for long-term supply assurance.

Longevity program

AEC-Q101 qualification, low RDS(on), and full board-net coverage

  • Beyond AEC-Q101 qualification and PPAP capability: All Infineon automotive MOSFETs are qualified beyond AEC-Q101 and are PPAP-capable, reducing qualification effort and design-in risk for Tier-1 automotive suppliers across all voltage classes.
  • Low RDS(on) across voltage classes: OptiMOS™ 5 delivers up to 25% RDS(on) reduction versus the prior generation at 150 V, with a minimum example of 1.15 mΩ at 80 V. OptiMOS™ 6 achieves 2.5 mΩ at 150 V. This reduces conduction loss in high-current switching paths.
  • 100% avalanche tested for ruggedness: OptiMOS™ 7 devices are 100% avalanche tested, providing verified ruggedness for automotive load conditions including inductive switching and load dump events.
  • Single-supplier coverage from 12 V to high-voltage automotive systems: OptiMOS™ and CoolMOS™ families cover 12 V body control through to 800 V high-voltage automotive systems, enabling a single-supplier strategy across the full automotive voltage range.

VDS, RDS(on), drain current, gate charge, and VGS(th)

Breakdown voltage (VDS(max)): VDS(max) must exceed the peak bus voltage including transients. The portfolio covers 30 V for 12 V board net applications up to 800 V for high-voltage powertrain designs.

On-state resistance (RDS(on)): RDS(on) determines conduction loss during the on-state. Lower values reduce heat generation in high-current paths. The OptiMOS™ portfolio spans 0.39 mΩ to 430 mΩ, and the CoolMOS™ portfolio spans 10 mΩ to 2.7 Ω (2,700 mΩ).

Continuous drain current (ID at 25°C): ID defines the maximum continuous current at 25°C. The portfolio covers 5 A to 510 A, from body control actuators to powertrain switches.

Gate charge (QG, QGD, QGS): Gate charge parameters are the primary inputs for switching loss calculations. Lower QG reduces gate driver power consumption at high switching frequencies.

Reverse recovery charge (Qrr): Qrr determines commutation ruggedness in bridge topologies. OptiMOS™ 5 and 6 deliver reduced Qrr versus prior generations, with the lowest Qrr in SuperSO8 at 26 nC at 150 V.

Go to Infineon MOSFET finder

Efficiency, ruggedness, and automotive qualification data

  • Operating temperature range

OptiMOS™ 5 automotive devices are rated up to 175°C maximum junction temperature. OptiMOS™ 6 and OptiMOS™ 7 families are rated from –40°C to +150°C. All families cover the full automotive ambient range, including underhood environments.

  • AEC-Q101 qualification

All products are qualified beyond AEC-Q101 and are PPAP-capable, exceeding the standard's requirements for automotive reliability and lifetime performance.

  • RoHS and environmental compliance

All OptiMOS™ 7 products are Pb-free, RoHS-compliant, and halogen-free per IEC 61249-2-21.

12 V body control, 48 V mild hybrid, and HV automotive applications                                                                          

12 V board net: Body control, motor drives, and battery management

For 12 V board net load switching, motor drives, and battery management, the 30 V to 60 V OptiMOS™ 5, 6, and 7 series in S3O8, SSO8, and SuperSO8 packages is recommended for low RDS(on) and compact footprint.

48 V mild hybrid DC-DC conversion and motor drive

For 48 V DC-DC converters and belt-integrated starter-generator drives, the 80 V to 120 V OptiMOS™ 5 and 6 series in TOLL, TOLG, and TOLT packages delivers the current capability and switching performance required for bidirectional power conversion.

High-voltage automotive applications

For high-voltage automotive applications including on-board chargers and HV DC-DC converters, the 600 V to 800 V CoolMOS™ CPA, CFDA, CFD7A, and C3A series addresses automotive SMPS topologies.

Automotive body control module
Automotive battery management system

Step-by-step automotive MOSFET selection guide

  • Step 1: Determine the bus voltage class

Select VDS(max) to exceed the maximum bus voltage including transients: 30 V to 60 V for 12 V systems, 80 V to 120 V for 48 V systems, 600 V to 800 V for high-voltage automotive applications.

  • Step 2: Select the technology generation

Use OptiMOS™ 7 for 55 V to 100 V nodes requiring the lowest RDS(on) x A footprint. Use OptiMOS™ 6 for 150 V to 200 V nodes. Use OptiMOS™ 5 for 60 V to 150 V where Qrr reduction is a priority.

  • Step 3: Determine the maximum allowable RDS(on)

Calculate from the power dissipation budget and package thermal resistance. RDS(on) is specified at VGS = 10 V standard or 4.5 V for logic-level gate drive.

  • Step 4: Evaluate gate charge against switching frequency.

Minimize QG for high-frequency DC-DC converters. For low-frequency load switches, prioritize lower RDS(on) over QG.

  • Step 5: Select the package based on thermal constraints

Use lead-less packages (S3O8, SSO8, TOLL) for smallest footprint, TOLT or SSO10T for top-side cooling, and leaded packages (DPAK, D2PAK, TO220) for clip-mounted solutions.

 

Use the Automotive MOSFET parametric selection tool to filter by voltage, RDS(on), current, and package.

OptiMOS™ and CoolMOS™ technology, AEC-Q100 qualification, and longevity support

  • OptiMOS™ and CoolMOS™ process technology

Infineon's OptiMOS™ and CoolMOS™ automotive MOSFET families share a common automotive qualification framework, providing a single-supplier platform from 12 V body control to 800 V high-voltage automotive systems without requiring a technology or supplier change between voltage classes.

  • AEC-Q101 qualification

All products carry an AEC-Q101 qualification from -55°C to 175°C, documented in individual datasheets.

  •  Quality and reliability beyond AEC-Q101

Automotive applications demand power MOSFETs that deliver reliable performance over long product lifetimes and under challenging operating conditions. Infineon Automotive MOSFETs are developed with quality as a core design principle, from requirement definition and technology development to qualification, production control, and continuous improvement.

Infineon goes beyond standard automotive qualification requirements with extended stress testing, enhanced screening, strict qualification criteria, and continuous reliability monitoring. This quality approach supports lower failure rates, robust product ramp-up, and reliable performance across automotive applications.

For customers, this means more confidence during design-in and production: proven automotive qualification, robust package technologies, access to Product Qualification Reports, and FIT reports that support reliability assessment at product level. For further information click here.

  • Automotive MOSFET longevity program

Infineon's longevity program provides long-term product availability commitments, reducing redesign risk for multi-year automotive production programs.

OptiMOS™ & StrongIRFET™ family selection

Software, simulation models, reference designs, and training

Infineon provides a comprehensive set of design-in resources for automotive MOSFETs. Simulation models for SPICE and online simulation tools (Infineon Designer, InfineonSpice Desktop Circuit Simulator) support circuit-level development, investigation, and verification across key automotive topologies. Infineon provides MOSFET design files supporting the PCB layout for several environments. Reference designs cover as inverter, DC motor control, DCDC converter and power distribution.

A library of training videos, application notes and other documentation covers topics to MOSFET’s data sheet interpretation, key and application-specific design considerations, guidance on MOSFET assembly, thermal performance and heat management, SPICE model usage, and MOSFET selection aids. All training materials are available through the Infineon Academy learning platform, with more than 600 courses accessible free of charge.

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