碳化硅 MOSFET 单管
适合硬开关与谐振开关拓扑的650 V、1200 V与1700 V CoolSiC™ MOSFET单管
我们的 CoolSiC™ MOSFET系列立足于经过优化的最先进的沟槽工艺，可实现最低的应用损耗与最高的运行可靠性。CoolSiC™单管产品采用TO和SMD封装，电压等级为650 V、1200 V和1700 V，额定导通电阻为27 mΩ-1000 mΩ。CoolSiC™沟槽技术实现了灵活的参数设置，您将能借此在相关产品组合中实现针对具体应用的特性，比如栅源电压、雪崩规格、短路能力或适用于硬换向的内部体二极管。
采用单管封装的CoolSiC™ MOSFET适用于硬开关和谐振开关拓扑，如功率因素校正（PFC）电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。即使桥接拓扑中关断电压为零时.出色的寄生导通抗扰度也可在低动态损耗方面树立基准。我们的TO和SMD产品还具有开尔文源引脚，优化了开关性能。
我们通过一系列精细挑选的驱动器IC产品，对碳化硅单管产品进行了补充，满足了人们对超快碳化硅MOSFET开关功能的需求。CoolSiC™ MOSFET与EiceDRIVER™ 栅极驱动器IC 栅极驱动器IC 的结合，充分发挥了碳化硅技术的优势：提高效率、节省空间、减轻重量、减少部件数量以及增强系统可靠性。
CoolSiC™ MOSFET拥有快速内部续流二极管，因而可在无需额外二极管的情况下实现硬开关。由于是单极性，尤其在部分负载条件下，MOSFET具有与温度无关的极低开关损耗及导通损耗。
英飞凌独特的1200 V和650 V CoolSiC™ MOSFET，非常适合LLC和ZVS等硬开关和谐振开关拓扑，可以像IGBT或CoolMOS™一样选用标准驱动。得益于先进的沟槽设计，最优的开关损耗和导通损耗，最高的跨导电平（增益），Vth = 4 V的阈值电压，以及卓越的短路能力，这些器件具有绝佳的门极氧化层可靠性。
Silicon Carbide (SiC) Forum
SiC论坛为您提供了交流想法并分享经验的平台，在这里我们的SiC器件及应用专家为您提供有关CoolSiC™ MOSFET模块和单管的建议。
SiC MOSFET 1200 V门极驱动芯片
CoolSiC™ MOSFET等超快速开关器件的完美使用需要性能优异的门极驱动。因此，建议选择基于英飞凌无铁芯变压器技术的隔离驱动EiceDRIVER™芯片
CoolSiC™ MOSFET Webinars
Watch our webinar to discover more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.
CoolSiC™ MOSFET Microlearnings
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.
This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
Driving a CoolSiC™ MOSFET is much easier than you think. This training will show you how it can be driven with a 0 V turn-off gate voltage.
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
See how to optimize devices’ behavior in their applications with Infineon’s SPICE Compact Models for CoolSiC™ MOSFETs.
In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs, Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.
Get to know paralleling IGBT power modules with SiC MOSFETs can be exacerbated due to the much faster device switching speeds, motivation behind paralleling SiC MOSFET modules, key challenges and solutions for both gate driver and power layout design and optimized system loop inductance to minimize switching losses.
Get to know paralleling IGBT power modules with SiC MOSFETs can be exacerbated due to the much faster device switching speeds, motivation behind paralleling SiC MOSFET modules, key challenges and solutions for both gate driver and power layout design and optimized system loop inductance to minimize switching losses.
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