碳化硅 MOSFET 单管
适合硬开关与谐振开关拓扑的650 V、1200 V与1700 V CoolSiC™ MOSFET单管
我们的 CoolSiC™ MOSFET系列立足于经过优化的最先进的沟槽工艺，可实现最低的应用损耗与最高的运行可靠性。CoolSiC™单管产品采用TO和SMD封装，电压等级为650 V、1200 V和1700 V，额定导通电阻为27 mΩ-1000 mΩ。CoolSiC™沟槽技术实现了灵活的参数设置，您将能借此在相关产品组合中实现针对具体应用的特性，比如栅源电压、雪崩规格、短路能力或适用于硬换向的内部体二极管。
采用单管封装的CoolSiC™ MOSFET适用于硬开关和谐振开关拓扑，如功率因素校正（PFC）电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。即使桥接拓扑中关断电压为零时.出色的寄生导通抗扰度也可在低动态损耗方面树立基准。我们的TO和SMD产品还具有开尔文源引脚，优化了开关性能。
我们通过一系列精细挑选的驱动器IC产品，对碳化硅单管产品进行了补充，满足了人们对超快碳化硅MOSFET开关功能的需求。CoolSiC™ MOSFET与EiceDRIVER™ 栅极驱动器IC 栅极驱动器IC 的结合，充分发挥了碳化硅技术的优势：提高效率、节省空间、减轻重量、减少部件数量以及增强系统可靠性。
CoolSiC™ MOSFET拥有快速内部续流二极管，因而可在无需额外二极管的情况下实现硬开关。由于是单极性，尤其在部分负载条件下，MOSFET具有与温度无关的极低开关损耗及导通损耗。
英飞凌独特的1200 V和650 V CoolSiC™ MOSFET，非常适合LLC和ZVS等硬开关和谐振开关拓扑，可以像IGBT或CoolMOS™一样选用标准驱动。得益于先进的沟槽设计，最优的开关损耗和导通损耗，最高的跨导电平（增益），Vth = 4 V的阈值电压，以及卓越的短路能力，这些器件具有绝佳的门极氧化层可靠性。
Silicon Carbide (SiC) Forum
SiC论坛为您提供了交流想法并分享经验的平台，在这里我们的SiC器件及应用专家为您提供有关CoolSiC™ MOSFET模块和单管的建议。
SiC MOSFET 1200 V门极驱动芯片
CoolSiC™ MOSFET等超快速开关器件的完美使用需要性能优异的门极驱动。因此，建议选择基于英飞凌无铁芯变压器技术的隔离驱动EiceDRIVER™芯片
We are introducing the CoolSiC™ MOSFET with .XT interconnection technology in a 1200 V optimized D2PAK-7 SMD package. SiC MOSFET ohmic conduction losses and fully controllable switching transients are a perfect match with the load profile of such motors. Since the SMD device enables passive cooling for the inverters, they can now be designed maintenance-free.
The presentation will inform you about the specifics of the device. Additionally, the presenting expert will give insights about how maintenance-free inverters can be build up. He will also touch other applications, which are profiting from the CoolSiC™ SMD MOSFET.
Dr. Steffen Metzger explains the technical details of the CoolSiC™ MOSFET in 650V, and highlights the benefits they bring for specific applications. Additionally, he compares the 650 V CoolSiC™ MOSFET with GoolGaN™ and CoolMOS™ and their respective positioning within the greater realm of power semiconductors.
The latest CoolSiC™ MOSFET 650 V is built on a state-of-the-art trench semiconductor process, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. It leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness and ease of use.
Thanks to its technological behavior, CoolSiC™ is best-suited for high-power applications. CoolSiC™ sets an industry technology benchmark by combining high performance with robustness and ease-of-use. It enables reliability gains, especially with high temperatures and in harsh environments. Watch this video to learn more about the benefits CoolSiC™ can bring to your designs!
CoolSiC™ MOSFET Microlearnings
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.
This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
驱动CoolSiC™ MOSFET 比你想象的容易的多。这个微学习会向你展示CoolSiC™ MOSFET甚至可以用0V门级电压关断。
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
See how to optimize devices’ behavior in their applications with Infineon’s SPICE Compact Models for CoolSiC™ MOSFETs.
In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs, Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.
Learn about the motivation behind paralleling SiC MOSFET modules, what are the key challenges and solutions for both gate driver and power layout design and get familiar with optimized system loop inductance to minimize switching losses.
Recognize the motivation behind paralleling of the SiC MOSFET modules, as well as key challenges and solutions for both gate driver and power layout design. Learn about optimized system loop inductance to minimize switching losses solution.
Get know recent trends in 1500 Volt PV system, challenges and technical and gain educated comprehensive solution for the 1500 Volt PV market.
- Distinguish the features and benefits of Infineon’s CoolSiC™ solutions in target applications and identify Infineon’s fully scalable CoolSiC™ portfolio to meet this automotive market transition
- Explain the reasons for the increasing introduction of silicon carbide technology in the automotive applications
