碳化硅 CoolSiC™ MOSFETs
英飞凌CoolSiC™半导体解决方案是迈向能源智能型世界的重要一步。
碳化硅 CoolSiC™ MOSFETs 子类别
立足于大量的经验和兼容性的技术知识，英飞凌推出了开拓性的CoolSiC™ MOSFET技术，使完全的新品设计成为可能。与传统的基于的硅的IGBT和MOSFET开关相比，碳化硅MOSFET提供了一系列优势。CoolSiC™ MOSFET 1200V系列的先导产品聚焦光伏逆变器、充电装置和储能的应用。碳化硅 CoolSiC™ MOSFET代表着最佳的性能和可靠性，并为便利系统设计师的使用提供前所未有的效率和系统灵活性。
新材料升级，为客户提供更高水准的性能
碳化硅（SiC）为设计人员提供更高的灵活度，将效率和可靠性推至全新高度。
相比于IGBT和MOSFET等传统高电压（>600V）硅开关器件，SiC MOSFET产品具有诸多优点，例如在1200V级开关中最低的门极电荷和器件电容电平、反并联二极管无反向恢复损耗、低切换损耗不受温度影响以及无阈值导通特性。
除此之外，英飞凌1200V SiC MOSFET还具备额外的优势。得益于领先的沟槽设计、业界最卓越的开关和导通损耗表现、最高的跨电平（增益）性能、阈值电压Vth = 4 V以及短路稳健性，门极氧化层表现优异。这些特性将助力您的方案达到全新高度。
所有这些优点共同组成了强大的SiC MOSFET产品，使其成为硬式开关和谐振开关拓扑结构（如LLC和ZVS）的理想之选。这些器件还可以在标准驱动的配合下产生类似IGBT的驱动效果。这款产品可以在硅器件无法达到的开关频率下提供最高频率，从而使系统尺寸得以降低，同时提高功率密度并提高工作寿命内的可靠性。
产品阵容
CoolSiC™ MOSFET首款产品面向光伏逆变器、电池充电设备及储能装置
TO-247-4引脚封装含有一个与源极（Kelvin连接）相连的附加连接，用作门极驱动电压的参考电位，以消除源极电感电压下降的影响。通过这种方式，该封装的开关损耗较TO247-3引脚版本封装更低，尤其是在电流较大以及开关频率较高的情况下。Easy1B模块提供了散热性能良好的接口、较低的漏电感、稳健的设计以及PressFIT压接式管脚。
Silicon Carbide (SiC) Forum
SiC论坛为您提供了交流想法并分享经验的平台，在这里我们的SiC器件及应用专家为您提供有关CoolSiC™ MOSFET模块和单管的建议。
SiC MOSFET 1200 V门极驱动芯片
CoolSiC™ MOSFET等超快速开关器件的完美使用需要性能优异的门极驱动。因此，建议选择基于英飞凌无铁芯变压器技术的隔离驱动EiceDRIVER™芯片
CAV不断变化—电气化如何改变商用车业务
推动商用车辆电气化的网络研讨会
CoolSiC™ MOSFET Webinars
Watch our webinar to discover more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.
CoolSiC™ MOSFET Microlearnings
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.
This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
Driving a CoolSiC™ MOSFET is much easier than you think. This training will show you how it can be driven with a 0 V turn-off gate voltage.
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs, Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.
Get to know paralleling IGBT power modules with SiC MOSFETs can be exacerbated due to the much faster device switching speeds, motivation behind paralleling SiC MOSFET modules, key challenges and solutions for both gate driver and power layout design and optimized system loop inductance to minimize switching losses.
Get to know paralleling IGBT power modules with SiC MOSFETs can be exacerbated due to the much faster device switching speeds, motivation behind paralleling SiC MOSFET modules, key challenges and solutions for both gate driver and power layout design and optimized system loop inductance to minimize switching losses.
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