EiceDRIVER™ SiC MOSFET 栅极驱动器 IC

综述

非常适合 CoolSiC™ MOSFET 的栅极驱动器 IC

超快速开关 1200 V 功率晶体管，如 ：CoolSiC™ MOSFET 可以通过隔离栅极输出段实现更轻松的处理。因此，推荐以下基于我们的无芯变压器技术的 EiceDRIVER™ 电气隔离栅极驱动器 IC 作为合适的选择。

这些驱动器具有适用于 SiC MOSFET 驱动最重要的关键特性和参数，如紧密的传播延迟匹配、精确的输入滤波器、较宽的输出侧电源范围、负栅极电压能力、扩展的 CMTI 能力、有源米勒箝和去饱和 (DESAT) 保护。

产品
详情

有关隔离栅极驱动器的更多选择，请参阅我们的 EiceDRIVER™ 栅极驱动器选择指南产品组合概览部分。这些驱动器具有适用于 SiC MOSFET 驱动最重要的关键特性和参数，如紧密的传播延迟匹配、精确的输入滤波器、较宽的输出侧电源范围、负栅极电压能力、扩展的 CMTI 能力、有源米勒箝和去饱和 (DESAT) 保护。

特性 应用
  • 有具备8 毫米爬电距离的宽体封装可选
  • 适用于在高环境温度下工作
  • 有源米勒箝
  • 短路夹紧，主动关断
  • ≥ 100 kV/μs CMTI (1EDU20I12SV: ≥ 50 kV/μs CMTI )
  • 精确的去饱和 (DESAT) 保护
  • 12 V/ 11 V 典型的 UVLO 阈值

 

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