EiceDRIVER™ SiC MOSFET 栅极驱动器 IC

综述

非常适合 CoolSiC™ MOSFET 的栅极驱动器 IC

集成电气隔离功能的栅极驱动器IC是 CoolSiC™ MOSFET等650 V和1200 V超快速开关功率晶闸管的理想驱动方案。

这些栅极驱动器具备驱动碳化硅MOSFET所需的最重要的关键功能和参数，比如传播延迟精准匹配、精确的输入滤波器、宽范围的输出侧电源、负栅极电压能力、有源米勒钳位、扩展的共模瞬态抗扰度（CMTI）能力、退饱和 (DESAT) 保护以及输入-输出电气隔离。

在碳化硅MOSFET半桥结构中，双通道隔离栅极驱动器IC的两个输出通道之间的3.3mm爬电距离是不够的，这时，将用于自举高边的单通道隔离栅极驱动器IC和具有真差分输入的非隔离栅极驱动器IC组合起来，是一个不错的选择。这种组合能够实现最佳的栅极回路布局，提供独立的低阻抗拉电流输出和灌电流输出。

了解更多电气隔离栅极驱动器产品，请访问查看EiceDRIVERTM电气隔离栅极驱动器IC完整列表。

产品
亮点

有关隔离栅极驱动器的更多选择，请参阅我们的 EiceDRIVER™ 栅极驱动器选择指南产品组合概览部分。这些驱动器具有适用于 CoolSiC™ MOSFET 驱动最重要的关键特性和参数，如紧密的传播延迟匹配、精确的输入滤波器、较宽的输出侧电源范围、负栅极电压能力、扩展的 CMTI 能力、有源米勒钳位和退饱和（DESAT）保护。

特性 应用
  • 有具备8 毫米爬电距离的宽体封装可选
  • 适用于在高环境温度下工作
  • 有源米勒钳位
  • 短路钳位，主动关断
  • ≥ 100 kV/μs CMTI (1EDU20I12SV: ≥ 50 kV/μs CMTI )
  • 精确的退饱和 (DESAT) 保护
  • 12 V/ 11 V 典型的 UVLO 阈值

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