EiceDRIVER™ SiC MOSFET 栅极驱动器 IC
非常适合 CoolSiC™ MOSFET 的栅极驱动器 IC
集成电气隔离功能的栅极驱动器IC是 CoolSiC™ MOSFET等650 V和1200 V超快速开关功率晶闸管的理想驱动方案。
这些栅极驱动器具备驱动碳化硅MOSFET所需的最重要的关键功能和参数，比如传播延迟精准匹配、精确的输入滤波器、宽范围的输出侧电源、负栅极电压能力、有源米勒钳位、扩展的共模瞬态抗扰度（CMTI）能力、退饱和 (DESAT) 保护以及输入-输出电气隔离。
在碳化硅MOSFET半桥结构中，双通道隔离栅极驱动器IC的两个输出通道之间的3.3mm爬电距离是不够的，这时，将用于自举高边的单通道隔离栅极驱动器IC和具有真差分输入的非隔离栅极驱动器IC组合起来，是一个不错的选择。这种组合能够实现最佳的栅极回路布局，提供独立的低阻抗拉电流输出和灌电流输出。
了解更多电气隔离栅极驱动器产品，请访问查看EiceDRIVERTM电气隔离栅极驱动器IC完整列表。
有关隔离栅极驱动器的更多选择，请参阅我们的 EiceDRIVER™ 栅极驱动器选择指南产品组合概览部分。这些驱动器具有适用于 CoolSiC™ MOSFET 驱动最重要的关键特性和参数，如紧密的传播延迟匹配、精确的输入滤波器、较宽的输出侧电源范围、负栅极电压能力、扩展的 CMTI 能力、有源米勒钳位和退饱和（DESAT）保护。
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Every switch needs a driver, and the right driver makes a difference.
Infineon offers different isoalted gate driver families, such as the EiceDRIVER™ Compact and the EiceDRIVER™ Enhanced. Each family has different features to protect the switch and application.
The EiceDRIVER™ isolated gate driver offers advanced features such as reinforced isolation, Miller clamp, slew rate control and short circuit protection to protect the switch and application. It also enables condition monitoring and rapid prototyping.
The EiceDRIVER™ is the perfect fit for industrial application, particular in combination with Infineon CoolSiC™ and IGBT switches.
By taking this course you will learn more about…
- The gate driving limitation in SiC MOSFETs
- The reason for gate driving limitation parameters in datasheets
- The possible solution to overcome those issues and improve the reliability
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- The EiceDRIVER™ X3 Compact family (1ED31xx), with up to 14 A output current, 2300 V functional isolation, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
The EiceDRIVER™ 2L-SRC Compact family (1ED32xx), with two-level slew-rate control and Miller Clamp
2L-SRC optimizes the gate resistors for EMI measurements and for normal operation, compared with the conventional solution
Up to 18 A output current, 200 kV/µs CMTI, VDE 0884-11 & UL 1577, ideal for CoolSiC™ SiC MOSFET and IGBT7 in drive, solar, UPS, etc.
Have you heard of the EiceDRIVER™ F3 product family yet? And are you curios about its features and benefits?
Find out more about the main features, key advanteges and real-life applications.
- The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc
- The new EiceDRIVER™ X3 Digital family (1ED38xx), with I2C-configurability for DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO).
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
Webinars
Servo drives come handy in a lot of applications, but controlling them and the power needed to drive them can be challenging when attempting to do it efficiently. Similarly, handling overload and short-circuit conditions is critical. Through this webinar, we will demonstrate best practices of protecting them and how to ensure the protection is reliable, robust and sufficiently fast for all operations. We will also give an exciting overview of suitable boards for evaluation and show the comprehensive Infineon portfolio of SiC MOSFETs and gate driver solutions.
Key Takeaways
- Understand how Infineon responds to the trends in the industry drives market: e.g. inverter integration with SiC MOSFETs and get an overview of some of the solutions offered
- Learn how to enable lower switching losses compare to IGBTs at same dV/dt levels and enhanced switching control
- Explore how to avoid the main pitfalls when driving SiC MOSFETs
- Discover how to reliably protect SiC MOSFETs using EiceDRIVER™ gate drivers
