- Low Switching Losses
- Trench IGBT 3
- V(CEsat) with positive Temperature Coefficient
- Low V(CEsat)
- Al(2)O(3) Substrate with Low Thermal Restistance
- Compact Design
- Solder Contact Technology
- Rugged mounting due to integrated mounting clamps
- Compact module concept
- Optimized customer’s development cycle time and cost
- Configuration flexibility
Optimize your application with an EiceDRIVER™ Enhanced HV Gate Driver IC.
Also available as variation with PressFIT mounting technology: FS35R12W1T4_B11
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