Technology for optimizing power generation, transmission, and consumption
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Low and high voltage gate driver IC and board solutions for reliable and efficient controls for IGBTs and MOSFETs. Infineon‘ s DC-DC low voltage gate driver are high speed drivers for dual Power MOSFETs in applications such as Computing and Telecom Point of Load, tailoring the efficiency of the system based on the designer‘s conditions and needs. Please also find our high perfomance Isolated Gate Driver ICs & boards (EiceDRIVER™) for either CoolMOS™ MOSFETs and IGBT Discretes or even Modules for most industrial applications.
High Power Thyristor & Diodes
Robust and high efficient Thyristors & Diodes in presspack or module housings for high power applications like electrical drives, voltage soft starters, general purpose power supplies and even complex energy transmission systems.
Infineon offers a comprehensive portfolio of technology leading IGBT Bare Dies, Discretes, Modules and even complete Stacks. This enables us to offer reliable and high efficient solutions for your industrial applications like e.g. General Purpose Inverters, Solar and Wind Inverter, UPS, Welding, Induction Heating and SMPS systems. We also recommend to use our IGBTs in consumer applications like Rice Cookers, Microwave and induction cooking ovens or even airconditioning systems. Discrete Automotive IGBTs and also Modules can be used in applications such as Piezo Injection, HID Lighting, Pumps and Small Drives.
Integrated Power Stages
The product offering provides power stage solutions with highest efficiency and power density such as DrMOS and DrBlade. With DrBlade Infineon offers a new ultra-compact integrated MOSFET halfbridge driver, based on the revolutionary Blade chip embedding technology.
Infineon‘s MOSFET portfolio offers Automotive MOSFETs, Power MOSFETs and RF MOSFETs. OptiMOS™ for Automotive applications combines leading MOSFET technology with a robust packages to deliver best-in-class performance and outstanding current capacity. In power applications, OptiMOS™ 20V-250V consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit. The revolutionary CoolMOS™ power families 500V-900V set new standards in the field of Energy Efficiency and offer a significant reduction of conduction and switching losses, enabling high power density and efficiency for superior power conversion systems
SiC devices offer a number of attractive charcteristics for high voltage power semiconductors when compared to commonly used Silicon (Si). Infineon‘s CoolSiC™ Schottky diodes ranging from 600V-1200V improve efficiency and solution costs for applications such as Server, Telecom Solar, Lighting, Consumer, PC Power and AC/DC. The revolutionary CoolSiC™ 1200V SiC JFET family, in combination with the proposed Direct Drive Technology, represents Infineon’s leading edge solution to bring actual designs towards new and so far unattainable efficiency levels. Also available: High efficient IGBT power modules with SiC freewheeling diodes.
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