FF55MR12W1M1H_B11 CoolSiC™ MOSFET halfbridge module 1200 V
EasyDUAL™ 1B CoolSiC™ MOSFET half-bridge module 1200 V, 55 mΩ with PressFit contact technology and and Al2O3 ceramic.
Summary of Features
- Wide RBSOA
- Very low stray inductance
- Enlarged gate drive voltage window
- PressFIT pins
Benefits
- Extended maximum gate-source voltage of +23 V and -10 V
- Tvjop under overload condition with up to 175°C
- Best cost-performance ration which leads to reduced system costs
- Enabling high frequency operation and improvement for reduced cooling requirements
This training covers the properties of Silicon Carbide which change the way how an inverter is designed compared to Si-chips. With that in mind, we explain SiC specific degradation mechanisms and how to ensure that SiC devices survive in the application, considering these special failure modes, by applying the reliability tests Infineon developed. These are internally mandatory for SiC device qualifications to ensure better quality, safety, and reliable device performance for years.
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.
This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
