Silicon Carbide MOSFET Discretes
650 V, 1200 V, and 1700 V CoolSiC™ MOSFET discretes ideally suited for hard- and resonant-switching topologies
Our CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both lowest losses in the application and highest reliability in operation. The discrete CoolSiC™ portfolio in TO- and SMD-housings comes in 650 V, 1200 V and 1700 V voltages classes, with on-resistance ratings from 27 mΩ up to 1000 mΩ. CoolSiC™ trench technology enables a flexible parameter-set, which is used for implementation of application-specific features in respective product portfolios, e.g.: gate-source voltages, avalanche specification, short-circuit capability or internal body diode rated for hard commutation.
CoolSiC™ MOSFETs in discrete packages are ideally suited for both hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters. An excellent immunity against unwanted parasitic turn-on effects creates a benchmark in low dynamic loss, even at zero volt turn-off voltage in bridge topologies. Our TO- and SMD offering comes also with Kelvin-source pins for optimized switching performance.
We complete the SiC discrete offering with a range of selected driver IC products fulfilling the needs of the ultrafast SiC MOSFET switching feature. Together, CoolSiC™ MOSFETs and EiceDRIVER™ gate driver ICs leverage the advantage of SiC technology: improved efficiency, space and weight savings, part count reduction, enhanced system reliability.
CoolSiC™ MOSFETs in discrete housings come along with a fast internal freewheeling diode, thus making hard switching without additional diode chips possible. Due to its unipolar character, the MOSFETs show very low, temperature-independent switching and low conduction losses, especially under partial load conditions.
Our unique silicon carbide (SiC) CoolSiC™ MOSFET discrete products in 1200 V and 650 V are ideally suited for hard- and resonant-switching topologies such as LLC and ZVS, and can be driven like an IGBT or CoolMOS™, using standard drivers. These robust devices offer superior gate oxide reliability enabled by state-of-the-art trench design, best-in-class switching and conduction losses, highest transconductance level (gain), threshold voltage of Vth = 4 V and short-circuit robustness.
Silicon Carbide (SiC) Forum
The SiC web forum provides you with a platform for exchanging ideas with the community, asking our Silicon Carbide experts for advice and for sharing your experience with CoolSiC™ MOSFET modules and discretes.
SiC MOSFET 650 V and 1200 V Gate Driver ICs
Ultra-fast switching power transistors such as CoolSiC™ MOSFETs can be easier handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on Infineon’s coreless transformer technology are recommended as most suitable.
> More about our EiceDRIVER™ ICs for Silicon Carbide MOSFETs
We are introducing the CoolSiC™ MOSFET with .XT interconnection technology in a 1200 V optimized D2PAK-7 SMD package. SiC MOSFET ohmic conduction losses and fully controllable switching transients are a perfect match with the load profile of such motors. Since the SMD device enables passive cooling for the inverters, they can now be designed maintenance-free.
The presentation will inform you about the specifics of the device. Additionally, the presenting expert will give insights about how maintenance-free inverters can be build up. He will also touch other applications, which are profiting from the CoolSiC™ SMD MOSFET.
Dr. Steffen Metzger explains the technical details of the CoolSiC™ MOSFET in 650V, and highlights the benefits they bring for specific applications. Additionally, he compares the 650 V CoolSiC™ MOSFET with GoolGaN™ and CoolMOS™ and their respective positioning within the greater realm of power semiconductors.
The latest CoolSiC™ MOSFET 650 V is built on a state-of-the-art trench semiconductor process, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. It leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness and ease of use.
Thanks to its technological behavior, CoolSiC™ is best-suited for high-power applications. CoolSiC™ sets an industry technology benchmark by combining high performance with robustness and ease-of-use. It enables reliability gains, especially with high temperatures and in harsh environments. Watch this video to learn more about the benefits CoolSiC™ can bring to your designs!
CoolSiC™ MOSFET Webinars
Watch our webinar to discover more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.
CoolSiC™ MOSFET Microlearnings
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.
This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
Driving a CoolSiC™ MOSFET is much easier than you think. This training will show you how it can be driven with a 0 V turn-off gate voltage.
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
See how to optimize devices’ behavior in their applications with Infineon’s SPICE Compact Models for CoolSiC™ MOSFETs.
In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs, Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.
Get to know paralleling IGBT power modules with SiC MOSFETs can be exacerbated due to the much faster device switching speeds, motivation behind paralleling SiC MOSFET modules, key challenges and solutions for both gate driver and power layout design and optimized system loop inductance to minimize switching losses.
Get to know paralleling IGBT power modules with SiC MOSFETs can be exacerbated due to the much faster device switching speeds, motivation behind paralleling SiC MOSFET modules, key challenges and solutions for both gate driver and power layout design and optimized system loop inductance to minimize switching losses.
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