IGBT7 Discretes

Overview

650 V/ 1200 V TRENCHSTOP™ IGBT7 – it’s time to SWITCH

The 7th generation of discrete IGBT technology with outstanding performance has been released based on latest micro-pattern trenches technology which provide strongly reduced losses and offer a high level of controllability. Offered in two different maximum blocking voltage Vce - 650 V and 1200 V - the resulting devices are specially optimized for all industrial applications requiring lower losses, higher power density and softer switching.

Every switch needs a driver, and the right driver makes a difference. Together with the TRENCHSTOP™ IGBT7, we also offer the EiceDRIVER™ gate driver ICs, including low side driver, level-shift driver, and isolated driver. The EiceDRIVER™ family offers a wide range of output current options (from 0.1 A to 14 A) and different protection features like DESAT, Miller clamp, OCP, shutdown, integrated bootstrap diode, and isolation.

Products
Highlights

650 V TRENCHSTOP™ IGBT7 T7 Discrete

The switching frequency flexibility shown in table below is going from below 5 kHz up to 40 kHz, basically covers, the whole range of TRENCHSTOP™ (60 T and 60 DTP) or Highspeed family. It is a one to one alternative to predecessor generations with improved performance.
Looking on a product portfolio, which it is going from 20 A to 75 A copacked with the full rated freewheeling diode, so if the IGBT is 20 A, then the diode is 20 A aswell.
The switching frequency flexibility shown in table below is going from below 5 kHz up to 40 kHz, basicly covers, the whole range of TRENCHSTOP (60T and 60DTP) or Highspeed family. It is a one to one alternative to predecessor generations with improved performance.

 

Features & Benefits of Discrete TRENCHSTOP™ IGBT7:

If you are still using technology, like the short-circuit IGBT 3 or the non short-circuit TRENCHSTOP™ 5, then it is time to switch it.
With the flexible family IGBT7 T7 and its state-of-the-art quality and the best price/performance ratio, is this the best-in-class device for industrial motor drives, namely Uninterruptable Power supplies for Photo Voltaic and Air conditioning PFC topologies.

    • Features

      Maintaining SCWT

      The short-circuit withstand time (SCWT) for IGBT7 T7 technology is defined to be 5 μs under test conditions of VCC = 330 V, Tvj = 100°C and VGE =15.0 V, which is relevant to the most applications.

      Maintaining short circuit withstand time (SCWT)

    • Features

      50 V higher blocking voltage

      Blocking voltage has been enhanced by 50 V in comparison with previous generations. This gives the device a higher margin of blocking voltage.

    • Features

      40% lower condition loss

      On-state IGBT voltage VCEsat is reduced by up to 30% (650 mV) and also the diode forward voltage (VF). This result in lower conduction losses.

    • Features

      20% lower switching loss

      New generation bring increased electrical performance of this device, where switching losses are very low, up to 20%.

      • Benefits

        Higher power density

        Higher power density enables lower cooling requirement, because 15% lower case temp rise, due to lowest losses

      • Benefits

        High system reliability

        High system reliability, due to Improved humidity ruggedness of the new product

      • Benefits

        Drop-in replacement

        Easy to design in customer application – drop-in replacement

      • Benefits

        Reduced system costs

        Reduced system costs, due to best price/performance device

      1200 V TRENCHSTOP™ IGBT7 S7 Discrete

      The extensive 1200 V TRENCHSTOP™ IGBT7 S7 portfolio represents the superior option for all industrial applications requiring short circuit capability/ruggedness. Our TRENCHSTOP™ IGBT 7 discrete - Benchmark efficiency short-circuit rugged discrete IGBT – at least 10% lower saturation voltage comparing to any other competitor.

      The TRENCHSTOP™ IGBT7 IGBT co-packed with very soft full-rated EC7 (emitter-controlled) diodes, offers a significantly reduced IGBT saturation VCEsatand low Qrr.The IGBT7 with its superior controllability and short-circuit ruggedness represents the benchmark among SC devices thanks to superior electrical performances, higher controllability, easy EMI design and higher reliability in application harsh conditions (HV-H3TRB and cosmic ray robustness)

      Training
      2 minutes on 650 V discrete IGBT7 T7

      Thanks to its superior controllability, humidity robustness and short-circuit ruggedness, Infineon’s IGBT7 T7 delivers the highest electrical performance among short-circuit devices.  Curious to know more? Watch this training.

      In this training we will present TRENCHSTOP™ IGBT7 by focusing on its key features and technical benefits. We will also see the existing and planned portfolio of IGBT7 for industrial drives applications.

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