IGBT7 Discretes

综述

650 V TRENCHSTOP™ IGBT7 T7 - superior controllability for the highest electrical performance

The 7th generation of discrete IGBT and diode technology with outstanding performance has been released as a flexible series to supersede our short-circuit rated TRENCHSTOP™, TRENCHSTOP™ Performance, and HighSpeed 3, and to be used as an alternative to the non-short-circuit rated TRENCHSTOP™5 technologies.

The 650 V TRENCHSTOP™ IGBT7 T7 IGBT (hereafter referred to as IGBT7 T7), co-packed with brand-new, full-rated EC7 (emitter-controlled) diodes, offers a significantly reduced IGBT saturation VCEsat and diode forward VF voltage. The maximum blocking voltage VCE was also increased from 600 V to 650 V. The IGBT7 T7 with its superior controllability and short-circuit ruggedness delivers the highest electrical performance among SC devices, with a humidity robustness of HV-H3TRB.

IGBT7 T7 is the best-in-class device for industrial motor drives providing a great ease of use in a wide range of applications including UPS/PV and air conditioner PFC topologies.

产品
亮点

Product Portfolio

Looking on a product portfolio, which it is going from 20 A to 75 A copacked with the full rated freewheeling diode, so if the IGBT is 20 A, then the diode is 20 A aswell.

The switching frequency flexibility shown in table below is going from below 5 kHz up to 40 kHz, basicly covers, the whole range of TRENCHSTOP (60T and 60DTP) or Highspeed family. It is a one to one alternative to predecessor generations with improved performance. 

Features & Benefits of Discrete TRENCHSTOP™ IGBT7

If you are still using technology, like the short-circuit IGBT 3 or the non short-circuit TRENCHSTOP™ 5, then it is time to change it.
With the flexible family IGBT7 T7 and its state-of-the-art quality and the best price/performance ratio, is this the best-in-class device for industrial motor drives, namely Uninterruptable Power supplies for Photo Voltaic and Air conditioning PFC topologies.

    • Features

      Maintaining SCWT

      The short-circuit withstand time (SCWT) for IGBT7 T7 technology is defined to be 5 μs under test conditions of VCC = 330 V, Tvj = 100°C and VGE =15.0 V, which is relevant to the most applications.

      Maintaining short circuit withstand time (SCWT)

    • Features

      50 V higher blocking voltage

      Blocking voltage has been enhanced by 50 V in comparison with previous generations. This gives the device a higher margin of blocking voltage.

    • Features

      40% lower condition loss

      On-state IGBT voltage VCEsat is reduced by up to 30% (650 mV) and also the diode forward voltage (VF). This result in lower conduction losses.

    • Features

      20% lower switching loss

      New generation bring increased electrical performance of this device, where switching losses are very low, up to 20%.

      • Benefits

        Higher power density

        Higher power density enables lower cooling requirement, because 15% lower case temp rise, due to lowest losses

      • Benefits

        High system reliability

        High system reliability, due to Improved humidity ruggedness of the new product

      • Benefits

        Drop-in replacement

        Easy to design in customer application – drop-in replacement

      • Benefits

        Reduced system costs

        Reduced system costs, due to best price/performance device

      650 V TRENCHSTOP™ IGBT7 T7 Discrete

      We introduce the discrete 650 V TRENCHSTOP™ IGBT7 portfolio with new soft EC7 diode inside. This best-in-class price performance range have premium controllability for the better EMI while switching losses are lower than the former technologies.

      培训

      2 minutes on 650 V discrete IGBT7 T7

      Thanks to its superior controllability, humidity robustness and short-circuit ruggedness, Infineon’s IGBT7 T7 delivers the highest electrical performance among short-circuit devices. Curious to know more? Watch this training.

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