IGBT 7单管器件

综述

650 V/ 1200 V TRENCHSTOP™ IGBT7 – it’s time to SWITCH

采用第七代IGBT和二极管技术的单管器件，具有优异性能，作为一个灵活的产品系列，可用于取代英飞凌的具有短路能力的TRENCHSTOP™（TRENCHSTOP™ Performance）和HighSpeed 3系列，也可用作TRENCHSTOP™5系列产品的的替代品。

650 V TRENCHSTOP™ IGBT7 T7 IGBT（以下简称为“IGBT7 T7”）与全新的、全电压等级的EC7（发射极控制）二极管相组合，使得IGBT饱和压降VCEsat和二极管正向VF电压都大幅降低。最高阻断电压VCE也从600 V上升到650 V。凭借优良的控制特性、耐潮性能（HV-H3TRB）和抗短路能力，IGBT7 T7在具有短路能力器件中，电气性能最佳。

IGBT7 T7是工业电机驱动的最佳选择，同时也适用于UPS/PV和空调设备的PFC拓扑等众多应用。

产品

亮点

Overview Banner for TRENCHSTOP IGBT7 Discretes

The switching frequency flexibility shown in table below is going from below 5 kHz up to 40 kHz, basically covers, the whole range of TRENCHSTOP™ (60 T and 60 DTP) or Highspeed family. It is a one to one alternative to predecessor generations with improved performance.
Looking on a product portfolio, which it is going from 20 A to 75 A copacked with the full rated freewheeling diode, so if the IGBT is 20 A, then the diode is 20 A aswell.
The switching frequency flexibility shown in table below is going from below 5 kHz up to 40 kHz, basicly covers, the whole range of TRENCHSTOP (60T and 60DTP) or Highspeed family. It is a one to one alternative to predecessor generations with improved performance.

Features & Benefits of Discrete TRENCHSTOP™ IGBT7:

If you are still using technology, like the short-circuit IGBT 3 or the non short-circuit TRENCHSTOP™ 5, then it is time to switch it.
With the flexible family IGBT7 T7 and its state-of-the-art quality and the best price/performance ratio, is this the best-in-class device for industrial motor drives, namely Uninterruptable Power supplies for Photo Voltaic and Air conditioning PFC topologies.

Features

Features

Maintaining SCWT

The short-circuit withstand time (SCWT) for IGBT7 T7 technology is defined to be 5 μs under test conditions of VCC = 330 V, Tvj = 100°C and VGE =15.0 V, which is relevant to the most applications.

Maintaining short circuit withstand time (SCWT)
Features

50 V higher blocking voltage

Blocking voltage has been enhanced by 50 V in comparison with previous generations. This gives the device a higher margin of blocking voltage.
Features

40% lower condition loss

On-state IGBT voltage VCEsat is reduced by up to 30% (650 mV) and also the diode forward voltage (VF). This result in lower conduction losses.
Features

20% lower switching loss

New generation bring increased electrical performance of this device, where switching losses are very low, up to 20%.

Benefits

Benefits

Higher power density

Higher power density enables lower cooling requirement, because 15% lower case temp rise, due to lowest losses
Benefits

High system reliability

High system reliability, due to Improved humidity ruggedness of the new product
Benefits

Drop-in replacement

Easy to design in customer application – drop-in replacement
Benefits

Reduced system costs

Reduced system costs, due to best price/performance device

Product Portfolio of Discrete TRENCHSTOP IGBT7

1200 V TRENCHSTOP™ IGBT7 S7 Discrete

The extensive 1200 V TRENCHSTOP™ IGBT7 S7 portfolio represents the superior option for all industrial applications requiring short circuit capability/ruggedness. Our TRENCHSTOP™ IGBT 7 discrete - Benchmark efficiency short-circuit rugged discrete IGBT – at least 10% lower saturation voltage comparing to any other competitor.

The TRENCHSTOP™ IGBT7 IGBT co-packed with very soft full-rated EC7 (emitter-controlled) diodes, offers a significantly reduced IGBT saturation V_CEsatand low Q_rr_.The IGBT7 with its superior controllability and short-circuit ruggedness represents the benchmark among SC devices thanks to superior electrical performances, higher controllability, easy EMI design and higher reliability in application harsh conditions (HV-H3TRB and cosmic ray robustness)