34mm & 62mm

Flexibility, optimal electrical performance, highest reliability.

These are the keywords for a successful inverter layout. Our well-known 34 and 62mm modules are the right choice for your design. We present our product family of half-bridges, choppers, common emitter and single switches at 600 V/650 V/1200 V and 1700 V.

34mm products range from 50 to 150 A nominal current at 1200 V and feature the state-of-the-art IGBT4 chip technology.

62mm power modules have a broad product spectrum; customers can choose from different voltage classes, power ratings as well as different IGBT chip generations. The latest addition to the 1200 V 62mm portfolio is the integration of CoolSiC™ MOSFETs with R_DS(on)  ratings of 2, 3 and 6 mΩ.

Designers benefit from the large 34 and 62mm product portfolio offering high flexibility and reliability to the user. In addition, the portfolio supports in realizing modern inverter concepts for all kinds of applications in an efficient way.

62mm IGBT7 modules are your best choice for a highly reliable and performant power module solution.

This medium power module family is equipped with state of the art TRENCHSTOP™ IGBT7  chip technology. With its 800 A half bridge configuration it offers highest electrical performance within the package family and leading-edge power cycling capability.

High mechanical robustness of 62mm modules is given by solid nickel-coated copper baseplate and screw main terminals. Main terminals placed in the middle of the housing are well fitting for parallel connection and for 3-level configuration due to low inductive DC link connection.

All modules are available with our established pre-applied Thermal Interface Material.

Due to faster development cycles and limited development resources, Infineon provides EVAL boards helping to make first module measurements. Latest driver chips from us are used to be adopted for serial usage. Schematic, layout and part list are given in the EVAL Board user guide.

CoolSiC™ MOSFETs reduce the system complexity leading to lower system cost and size in mid to high power systems. Thanks to the outstanding material properties of SiC, solutions which have been possible in the low-voltage world (< 600 V) are now feasible at higher voltages as well.

Thanks to the superior trench technology in combination with the thick gate-oxide, CoolSiC™ MOSFETs offer highest reliability. In addition, the CoolSiC™ body diode is long-term stable and does not drift.

CoolSiC™ Trench MOSFET as industrial benchmark technology opens and enlarges the 62mm power module market for high volume application where Silicon IGBT technology reaches its limits.

This module family is targeting EV charging, energy storage systems, solar central inverters, auxiliary power supply for traction, server & IT infrastructure as well as commercial cooking.

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