CoolSiC™ Hybrid Modules
Silicon Carbide (SiC) diodes and transistors are key components for modern and innovative power electronic
Highest power density and efficiency can be achieved by using the chips as standalone components or in combination with silicon power devices in power modules. SiC diodes in particular are enabling parts to further extend the capabilities of IGBT technology.
Due to the lack of stored charge, mainly the turn on losses of modern IGBTs can be reduced considerably, thus allowing higher switching frequencies and/or higher current handling capabilities compared to a corresponding purely silicon based solution. Below, power modules with implemented SiC diodes in combination with IGBTs can be found where special care was taken to form an ideal pair leveraging the best available performance in the targeted applications.
Additionally, a CoolSiC™ based module including SiC transistors featuring a Half Bridge completes the options for the power design. Apart from enabling higher switching frequencies, the module presents a high flexibility due to the SiC JFET’s bidirectional conduction capability. Therefore it can be used as a step-up / down, as a bidirectional converter, or as a part of an inverter.
The number of power modules with SiC components will be complemented step by step with further parts, using either the combination of SiC diodes with silicon transistors or even SiC based transistors, currently based on the awarded CoolSiC™ technology.