IMDQ75R027M1H The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability.

Überblick

The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.

Zusammenfassung der Merkmale

  • Highly robust 750 V technology
  • Best-in-class RDS(on) x Qfr
  • Excellent Ron x Qoss and Ron x QG
  • Low Crss/Ciss together and high Vgsth
  • 100% avalanche tested 
  • .XT interconnection technology for best-in-class thermal performance
  • Cutting-edge top-side-cooled package 

Vorteile

  • Superior efficiency in hard switching
  • Enables higher switching frequency
  • Higher reliability
  • Withstand bus voltages beyond 500 V
  • Robustness against parasitic turn
  • Unipolar driving
  • Best-in-class thermal dissipation

Potentielle Zielanwendungen

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