AIMZHN120R060M1T Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L, 60mΩ

Überblick

With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Zusammenfassung der Merkmale

  • Very low switching losses
  • Increased turn-on voltage VGS(on)= 20 V
  • Best in class switching energy
  • Lowest device capacitances
  • low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on
  • Reduced total gate charge QGtot for lower driving power and losses
  • .XT die attach technology for best in class thermal performance
  • Sense pin for optimized switching performance
  • Suitable for HV creepage requirements

Vorteile

  • Efficiency improvement
  • Enabling higher frequency
  • Increased power density
  • Cooling effort reduction
  • Reduction of system complexity and cost

Potentielle Zielanwendungen

  • On-board charger
  • DC/DC converter
  • Auxiliary drives
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