IDFW40E65D1E
Überblick
650 V silicon power diode in TO-247 package
Rapid 1 switching 650 V, 40 A emitter controlled silicon power diode in a TO-247 advanced isolation package for a best cost efficient solution.
Zusammenfassung der Merkmale
- 650V emitter controlled technology
- Temperature stable behavior of key parameters
- Low forward voltage (VF)
- Low reverse recovery charge (Qrr)
- Low reverse recovery current (Irrm)
- Softness factor >1
- Maximum junction temperature 175°C
- 2500 VRMS electrical isolation, 50/60 Hz, t=1 min
- 100 % tested isolated mounting surface
- Pb-free lead plating; RoHS compliant
- Qualified for ndustrial applications according to the relevant tests of JEDEC[1]47/20/22
Vorteile
- No need to use isolation material and thermal grease
- 35% reduction in assembling time compared to standard TO-247 with Iso-foils
- Increased yield eliminating misalignments of isolation foils
- Up to 10°C lower Tc compared to standard TO-247 with isolation material
- Up to 20% Iout increase for higher power output
- Complete manufacturing process control
- Easy paralleling
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