Wide Bandgap Semiconductors (SiC/GaN)

The key for the next essential step towards an energy-efficient world lies in the use of new materials, such as wide bandgap semiconductors which allow for greater power efficiency, smaller size, lighter weight, lower overall cost – or all of these together. Infineon Technologies with its unique position of being the only company currently offering silicon (Si), silicon carbide (SiC), insulated-gate bipolar transistor (IGBT) and gallium nitride (GaN) devices, is the customer’s first choice in all segments.

CoolSiC™ - revolution to rely on in high voltage segments

Silicon carbide (SiC) has a wide bandgap of 3 electronvolt (eV) and a much higher thermal conductivity compared to silicon. SiC based MOSFETs are most suited for high breakdown, high power applications that operate at high frequency. Compared to silicon, the device parameters such as for example the R_DS(on) change less with temperature. This allows designers to work within tighter margins in their designs, allowing extra performance to be delivered. Based on proven, high quality volume manufacturing, Infineon’s CoolSiC™ solutions combine revolutionary technology with benchmark reliability – for our customers’ success today and tomorrow. >Learn more

EiceDRIVER™ - Gate driver ICs with perfect fit to CoolSiC™ MOSFET

EiceDRIVER™ SiC MOSFET gate driver ICs are well-suited to drive SiC MOSFETs, especially our ultra-fast switching CoolSiC™ SiC MOSFETs. These gate drivers incorporate most important key features and parameters for SiC driving such as tight propagation delay matching, precise input filters, wide output-side supply range, negative gate voltage capability, active Miller clamp, DESAT protection, and extended CMTI capability. >Learn more 

 CoolGaN™ - bringing Gallium Nitride (GaN) technology to the next level

GaN has an even higher bandgap (3.4 electronvolt) and substantially higher electron mobility than SiC. Compared to silicon (Si), the breakdown field is ten times higher and the electron mobility is double. Both the output charge and gate charge are ten times lower than with Si, and the reverse recovery charge is almost zero which is key for high frequency operations. GaN is the technology of choice in modern resonant topologies that enables and is enabling new approaches, including new topologies and current modulation. Infineon’s GaN solution is based on the most robust and performing concept in the market – the enhancement mode (e-mode) concept, offering fast turn-on and turn-off speed. CoolGaN™ gallium nitride products focus on high performance and robustness, and add significant value to a broad variety of systems across many applications such as server, telecom, wireless charging, adapter and charger, and audio. CoolGaN™ switches are ease-of-use and easy to design-in with the dedicated GaN EiceDRIVER™ gate driver ICs from Infineon. >Learn more