BSZ011NE2LS5I

Overview

Significantly reduced RDS(on) with best-in-class OptiMOS™ 5 power MOSFET 25V in small PQFN 3.3x3.3mm package

With the BSZ011NELS5I OptiMOS™ 5 power MOSFET, an additional device with integrated Schottky-like diode in high performance PQFN 3.3x3.3mm package is complementing Infineon’s high performance portfolio. It allows a further increase in system efficiency enabled by a significantly reduced RDS(on) in applications such as synchronous rectification in server and telecom SMPS. The outstanding electrical performance combined with a small PQFN 3.3x3.3mm package further enhances best-in-class power density and form factor improvement in the target applications.

Key features

  • Best-in-class (BIC) product
  • Small PQFN 3.3 x 3.3mm package
  • Monolithically integrated Schottky-like diode
  • Ultra low charges
  • Ideal for high performance applications
  • RoHS compliant - halogen free

Key benefits

  • Highest efficiency
  • Less paralleling required
  • Very low voltage overshoot
  • Reduced need for snubber circuit
  • System cost reduction
  • Small package for highest PCB layout routing flexibility
  • Switch mode power supply (SMPS)
  • Server power supply
  • Telecom DC-DC converters
Quality

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