IKZA75N120CH7 1200 V, 75 A IGBT with anti-parallel diode in TO-247 4pin package
Overview
Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
Summary of Features
- Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Optimized diode for target applications, resulting in low Qrr
- Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior
- Offering Tj(max) of 175 °C
Benefits
- Technology with the highest power density with up to 140 A rating
- Optimized performance in application conditions
- Lowest conduction losses
- Lowest switching losses
- Humidity robustness under harsh environment
- Improved EMI performance
- Kelvin emitter pin brings additional reduction of total switching losses compare to 3 pin
![product image for TRENCHSTOP™ IGBT7 H7 discrete in TO-247 4pin package technology](/export/sites/default/_images/product/power/igbt/IGBT-discretes/With-anti-parallel-diode/product_image/lowres-TO247-4-1200V-IGBT7.jpg_148935309.jpg)
Diagrams
Training
Support