IHW15N120R3
Overview
1200 V IGBT with anti-parallel diode in TO-247 package
The 3rd generation of reverse conducting 1200 V, 15 A TRENCHSTOP™ RC-IGBT3 with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs.
Summary of Features
- Best-in-class conduction properties in VCEsat and Vf
- Lowest switching losses, highest efficiency
- Tj(max) = 175°C
- Soft current turn-off waveforms for low EMI
Benefits
- Lowest power dissipation
- Better thermal management
- Surge current capability for lower EMI filtering requirements
- Reduced system costs
- Highest reliability against peak currents
Potential Applications
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