IR2213C_8 1200 V high- and low-side gate driver IC bare die for IGBT and MOSFET
Overview
The IR2213 bare die is a 1200 V high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3 V logic.
Summary of Features
- Floating channel up to 1200 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply from 12 V to 20 V
- Undervoltage lockout for both channels
- 3.3 V logic compatible
- Logic supply range from 3.3 V to 20 V
- Logic and power ground ±5 V offset
- Matched propagation delay for channels
- Outputs in phase with inputs
Benefits
- Safely drive 110 Vac to 380 Vac apps
- Withstand up to 1200 V dc voltage
- UVLO protection at low supply voltage
Diagrams
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