Infineon’s CoolGaN™ 600 V GIT HEMTs family of GaN enhancement mode power transistor offers fast turn-on and turn-off speed, at minimum switching losses.
The CoolGaN™ 600 V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards, making it the perfect choice for highest application reliability.
With the IGLR60R190D1 GaN power transistor, Infineon offers the CoolGaN™ GIT HEMTs in a small form factor SMD package, ideal for applications that require a compact device without a heatsink.
The ThinPAK 5x6 package is the recommended leadless SMD package for low power SMPS applications. It’s small footprint of 5x6mm² and low profile with only 1mm height makes it perfect for achieving highest power density.
The significantly smaller package size in combination with its benchmark low parasitics inductances can be used as a new and effective way to decrease system solution size in your designs.
Summary of Features
- GaN HEMT in small form factor leadless SMD package
- CoolGaN™ 600V series , GaN-tailored qualification
- Improves system efficiency
- Improves power density
- Enables higher operating frequency
- System cost reduction savings
- Reduces EMI