IGLR60R190D1

Überblick

600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability

The IGLR60R190D1 enables more compact topologies and increased efficiency at higher frequency operation.

It is certified through an extensive GaN-specific qualification process, exceeding industry standards.

Housed in the leadless TSON-8 (ThinPAK 5x6) package with a height of 1 mm only, it is perfect for achieving highest power density in low-power switched mode power supplies, such as USB-C adapters and chargers.

Zusammenfassung der Merkmale

  • E-mode HEMT – normally OFF 
  • Ultra fast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Bottom-side cooled

Vorteile

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

 

Potentielle Zielanwendungen

  • Low-power SMPS
  • Charger / adapters
  • SMPS for Industrial, telecom, datacenter based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC).
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