CYPT15B102N-GGMB | Infineon’s radiation hardened 2 Mb non-volatile Ferroelectric RAM (F-RAM) memory offers the utmost reliability and performance for extreme environments.

Overview

Our rad hard F-RAM is one of the industry’s lowest power, non-volatile memory solutions that is Single Event Upset (SEU) immune and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for space applications. For flight devices, order DLAM QML-V part 5962R2321301VXC

Summary of Features

2 Mb density, (128K x 16)
10-trillion read/write cycles
120 years data retention at +85°C
Low programming voltage (2V)
2.0 V–3.6 V operating range
Low operating current (20 mA max)
–55°C to +125°C military grade
44-pin ceramic TSOP (CTSOP)
Prototype for flight devices

Potential Applications

Data logging for calibration data for satellites
Data storage for sensors and instruments
Stand-alone boot code or embedded boot code storage for microcontrollers for cube sat payloads
Secure key storage for data encryption
Direct replacement for EEPROMs