CYPT15B102N-GGMB Infineon’s radiation hardened 2 Mb non-volatile Ferroelectric RAM (F-RAM) memory offers the utmost reliability and performance for extreme environments.
Overview
Our rad hard F-RAM is one of the industry’s lowest power, non-volatile memory solutions that is Single Event Upset (SEU) immune and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for space applications. For flight devices, order DLAM QML-V part 5962R2321301VXC
Summary of Features
- 2 Mb density, (128K x 16)
- 10-trillion read/write cycles
- 120 years data retention at +85°C
- Low programming voltage (2V)
- 2.0 V–3.6 V operating range
- Low operating current (20 mA max)
- –55°C to +125°C military grade
- 44-pin ceramic TSOP (CTSOP)
- Prototype for flight devices
Potential Applications
- Data logging for calibration data for satellites
- Data storage for sensors and instruments
- Stand-alone boot code or embedded boot code storage for microcontrollers for cube sat payloads
- Secure key storage for data encryption
- Direct replacement for EEPROMs
![](/export/sites/default/_images/product/lowres-Rad-Hard_2Mb-F-RAM_CG-TSOP-44_vA.tif.png_178487981.png)
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