BFP450
Überblick
High Linearity Low Noise Si NPN RF Transistor
Zusammenfassung der Merkmale
- Highly linear low noise driver amplifier for all RF frontends up to 2.5 GHz
- Output compression point OP1dB = 18.5 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system
- Output 3rd order intermodulation point OIP3 = 31 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system
- Maximum available gain Gma = 15.5 dB at 50 mA, 3 V, 1.9 GHz
- Minimum noise figure NFmin = 1.7 dB at 50 mA, 3 V, 1.9 GHz
- Based on Infineon´s reliable, high volume 25 GHz SIEGET™ line
- Easy to use Pb-free (RoHS compliant) standard package with visible leads
Potentielle Zielanwendungen
- Driver amplifier
- ISM bands 434 and 868 MHz
- 1.9 GHz cordless phones
- CATV LNA
- Transmitter driver amplifier
- 2.4 GHz WLAN and Bluetooth
- Output stage LNA for active antennas
- TV, GPS, SDARS, 2.4 GHz WLAN, etc.
- Suitable for 3 - 5.5 GHz oscillators
NPN Silicon RF Transistor
Zusammenfassung der Merkmale
- For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA
- Pb-free (RoHS compliant) package
Potentielle Zielanwendungen
- Wireless Communications
- LNA in RF Front-end
- For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
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