IGT60R190D1

Überblick

600 V CoolGaN™ 600 V e-mode power transistor for ultimate efficiency and reliability

This product is not recommended for new designs. Please explore its successor IGT65R140D2

The IGT60R190D1 enables more compact topologies and increased efficiency at higher frequency operation.

It is certified through an extensive GaN-specific qualification process, exceeding industry standards.

Housed in the bottom-side cooled HSOF-8 (TO-leadless) package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables and numerous other applications.

Zusammenfassung der Merkmale

  • E-mode HEMT – normally OFF
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Low dynamic RDS(on)
  • Bottom-side cooled

Vorteile

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

Potentielle Zielanwendungen

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