IGB070S10S1 CoolGaN™ Transistor 100 V G3 in PQFN 3x3, 5 mΩ

Überblick

The IGB070S0S1 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

Zusammenfassung der Merkmale

  • 100 V e-mode power transistor
  • Dual-side cooled package
  • No reverse recovery charge
  • Reverse conduction capability
  • Low gate charge, low output charge
  • Qualified according to JEDEC

Vorteile

  • Best-in-class power density
  • Highest efficiency
  • Improved thermal management
  • Enabling smaller and lighter designs
  • Excellent reliability
  • Lowering BOM cost
IGB070S10S1
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